APT75F50B2 APT75F50L 500V, 75A, 0.075 Max, t 310ns rr N-Channel FREDFET T-Max TO-264 Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This FREDFET version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced t , soft rr recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly reduced ratio of C /C result in excellent noise immunity and low switching loss. The rss iss APT75F50B2 APT75F50L intrinsic gate resistance and capacitance of the poly-silicon gate structure help control di/dt during switching, resulting in low EMI and reliable paralleling, even when switching Single die FREDFET at very high frequency. FEATURES TYPICAL APPLICATIONS Fast switching with low EMI ZVS phase shifted and other full bridg e Low t for high reliability Half bridg e rr Ultra low C for improved noise immunity PFC and other boost conver ter rss Low gate charg e Buck conver ter Avalanche energy rated Single and two switch forward RoHS compliant Flyback Absolute Maximum Ratings Symbol Parameter Ratings Unit Continuous Drain Current T = 25C 75 C I D Continuous Drain Current T = 100C 47 A C 1 I Pulsed Drain Current 230 DM V Gate-Source Voltage 30 V GS E 2 1580 Single Pulse Avalanche Energy mJ AS I 37 AR Avalanche Current, Repetitive or Non-Repetitive A Thermal and Mechanical Characteristics Min Typ Max Unit Symbol Characteristic P Total Power Dissipation T = 25C 1040 W D C R 0.12 Junction to Case Thermal Resistance JC C/W R 0.11 Case to Sink Thermal Resistance, Flat, Greased Surface CS T ,T Operating and Storage Junction Temperature Range -55 150 J STG C T Soldering Temperature for 10 Seconds (1.6mm from case) 300 L oz 0.22 W Package Weight T g 6.2 inlbf 10 Torque Mounting Torque ( TO-264Package), 4.40 or M3 screw 1.1 Nm Microsemi Website - Static Characteristics T = 25C unless otherwise specified APT75F50B2 L J Symbol Parameter Test Conditions Min Typ Max Unit V V = 0V, I = 250A Drain-Source Breakdown Voltage 500 V BR(DSS) GS D V /T Reference to 25C, I = 250A Breakdown Voltage Temperature Coefficient 0.60 V/C BR(DSS) J D V = 10V, I = 37A R 3 Drain-Source On Resistance 0.064 0.075 DS(on) GS D V Gate-Source Threshold Voltage 2.5 4 5 V GS(th) V = V , I = 2.5mA GS DS D V /T Threshold Voltage Temperature Coefficient -10 mV/C GS(th) J V = 500V T = 25C 250 DS J I Zero Gate Voltage Drain Current A DSS V = 0V T = 125C 1000 GS J I V = 30V Gate-Source Leakage Current 100 nA GSS GS Dynamic Characteristics T = 25C unless otherwise specified J Symbol Parameter Test Conditions Min Typ Max Unit g V = 50V, I = 37A fs Forward Transconductance 55 S DS D C Input Capacitance 11600 iss V = 0V, V = 25V GS DS C Reverse Transfer Capacitance 160 rss f = 1MHz C Output Capacitance 1250 oss pF 4 C Effective Output Capacitance, Charge Related 725 o(cr) V = 0V, V = 0V to 333V GS DS 5 C Effective Output Capacitance, Energy Related 365 o(er) Q Total Gate Charge 290 g V = 0 to 10V, I = 37A, GS D Q Gate-Source Charge 65 nC gs V = 250V DS Q Gate-Drain Charge gd 130 t Resistive Switching Turn-On Delay Time 45 d(on) t V = 333V, I = 37A Current Rise Time 55 r DD D ns 6 t R = 2.2 , V = 15V Turn-Off Delay Time 120 d(off) G GG t Current Fall Time 39 f Source-Drain Diode Characteristics Symbol Parameter Test Conditions Min Typ Max Unit Continuous Source Current MOSFET symbol I S 75 showing the (Body Diode) integral reverse p-n A Pulsed Source Current junction diode I SM 230 (body diode) 1 (Body Diode) V I = 37A, T = 25C, V = 0V Diode Forward Voltage 1.2 V SD SD J GS T = 25C 310 J t Reverse Recovery Time ns rr T = 125C 570 J 3 I = 37A T = 25C 1.48 SD J Q Reverse Recovery Charge C rr V = 100V T = 125C 3.85 DD J di /dt = 100A/s T = 25C 11.3 SD J I Reverse Recovery Current A rrm T = 125C 16.6 J I 37A, di/dt 1000A/s, V = 333V, SD DD dv/dt Peak Recovery dv/dt V/ns 20 T = 125C J 1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Starting at T = 25C, L = 2.31mH, R = 25, I = 37A. J G AS 3 Pulse test: Pulse Width < 380s, duty cycle < 2%. 4 C is defined as a fixed capacitance with the same stored charge as C with V = 67% of V . o(cr) OSS DS (BR)DSS 5 C is defined as a fixed capacitance with the same stored energy as C with V = 67% of V . To calculate C for any value of o(er) OSS DS (BR)DSS o(er) V less than V use this equation: C = -1.65E-7/V 2 + 5.51E-8/V + 2.03E-10. DS (BR)DSS, o(er) DS DS 6 R is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) G Microsemi reser ves the right to chang e , without notice , the specifications and information contained herein. 050-8126 Rev C 05-2009