TO-247 APT77N60BC6 APT77N60SC6 600V 77A 0.041 COOLMOS Power Semiconductors Super Junction MOSFET Ultra Low R DS(ON) 3 Low Miller Capacitance D PAK Ultra Low Gate Charge, Q g Avalanche Energy Rated dv Extreme / Rated dt D 3 Popular TO-247 or Surface Mount D package. G S MAXIMUM RATINGS All Ratings per die: T = 25C unless otherwise speci ed. C Symbol Parameter APT77N60B SC6 UNIT Drain-Source Voltage 600 Volts V DSS 77 Continuous Drain Current T = 25C C I D 49 Amps Continuous Drain Current T = 100C C 1 272 I Pulsed Drain Current DM Gate-Source Voltage Continuous 20 Volts V GS 481 Watts P Total Power Dissipation T = 25C D C Operating and Storage Junction Temperature Range - 55 to 150 T ,T J STG C Lead Temperature: 0.063 from Case for 10 Sec. 300 T L 2 13.4 Amps I Avalanche Current AR 2 2.96 E Repetitive Avalanche Energy ( Id =13.4A, Vdd = 50V ) AR mJ 1954 E Single Pulse Avalanche Energy ( Id = 13.4A, Vdd = 50V ) AS STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT 600 Volts BV Drain-Source Breakdown Voltage (V = 0V, I = 250A) (DSS) GS D 3 .037 .041 Ohms R Drain-Source On-State Resistance (V = 10V, I = 44.4A) DS(on) GS D 25 Zero Gate Voltage Drain Current (V = V , V = 0V, T = 25C) DS DSS GS C A I DSS 250 Zero Gate Voltage Drain Current (V = V , V = 0V, T = 150C) DS DSS GS C 100 nA I Gate-Source Leakage Current (V = 20V, V = 0V) GSS GS DS 2.5 3 3.6 Volts V Gate Threshold Voltage (V = V , I = 2.96mA) GS(th) DS GS D CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.COOLMOS comprise a new family of transistors developed by In neon Technologies AG.COOLMO is a trade- mark of In neon Technologies AG Microsemi Website - DYNAMIC CHARACTERISTICS APT77N60B SC6 Symbol Characteristic Test Conditions MIN TYP MAX UNIT C Input Capacitance 13600 iss V = 0V GS C Output Capacitance V = 25V 4400 pF oss DS f = 1 MHz C Reverse Transfer Capacitance 290 rss 4 Q Total Gate Charge 260 g V = 10V GS Q Gate-Source Charge 38 V = 400V nC gs DD I = 77A 25C D Q Gate-Drain Mille) Charge 144 gd t Turn-on Delay Time 18 d(on) INDUCTIVE SWITCHING V = 10V t Rise Time GS 27 r V = 380V ns DD t Turn-off Delay Time 110 165 d(off) I = 77A 25C D R = 5.0 t Fall Time 812 G f 5 E INDUCTIVE SWITCHING 25C Turn-on Switching Energy 1670 on V = 400V, V = 15V DD GS E Turn-off Switching Energy 2880 off I = 77A, R = 5 D G J 5 E Turn-on Switching Energy 2300 INDUCTIVE SWITCHING 125C on V = 400V, V = 15V DD GS E off Turn-off Switching Energy 3100 I = 77A, R = 5 D G SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT I Continuous Source Current (Body Diode) 77 S Amps 1 I Pulsed Source Current (Body Diode) 231 SM 3 V Diode Forward Voltage (V = 0V, I = -77A) 1 1.2 Volts SD GS S dv dv 6 / Peak Diode Recovery / 15 V/ns dt dt Reverse Recovery Time t T 950 ns di = 25C rr j (I = -77A, / = 100A/ s) S dt Reverse Recovery Charge Q T 32 C = 25C rr di j (I = -77A, / = 100A/ s) S dt Peak Recovery Current I T 60 Amps di = 25C RRM j (I = -77A, / = 100A/ s) S dt THERMAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX UNIT R Junction to Case 0.26 C/W JC R Junction to Ambient 40 JA 1 Repetitive Rating: Pulse width limited by maximum junction temperature 4 See MIL-STD-750 Method 3471 2 Repetitive avalanche causes additional power losses that can be calculated as 5 Eon includes diode reverse recovery. P = E *f . Pulse width tp limited by Tj max. AV AR 6 Maximum 125C diode commutation speed = di/dt 600A/ s 3 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% Microsemi reserves the right to change, without notice, the speci cations and information contained herein. 0.30 0.25 D = 0.9 0.20 0.7 0.15 0.5 Note: t 1 0.10 0.3 t 2 t 0.05 1 t Duty Factor D = / 2 0.1 Peak T = P x Z + T J DM JC C 0.05 SINGLE PULSE 0 -4 -2 -5 -3 10 10 10 10 0.1 1 RECTANGULAR PULSE DURATION (SECONDS) Figure 1, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration 050-7210 Rev A 8-2010 Z , THERMAL IMPEDANCE (C/W) JC P DM