800V 52A 0.16 APT8014L2FLL APT8014L2FLLG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. R POWER MOS 7 FREDFET TO-264 Power MOS 7 is a new generation of low loss, high voltage, N-Channel Max enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering R DS(ON) and Q . Power MOS 7 combines lower conduction and switching losses g along with exceptionally fast switching speeds inherent with Microsemi s patented metal gate structure. Lower Input Capacitance Increased Power Dissipation D Lower Miller Capacitance Easier To Drive G Lower Gate Charge, Qg Popular TO-264 MAX Package S FAST RECOVERY BODY DIODE MAXIMUM RATINGS All Ratings: T = 25C unless otherwise specified. C Symbol Parameter APT8014L2FLL(G) UNIT V 800 Volts Drain-Source Voltage DSS I Continuous Drain Current T = 25C 52 D C Amps 1 I Pulsed Drain Current 208 DM V Gate-Source Voltage Continuous 30 GS Volts V Gate-Source Voltage Transient GSM 40 Total Power Dissipation T = 25C Watts 893 C P D Linear Derating Factor W/C 7.14 T ,T Operating and Storage Junction Temperature Range -55 to 150 J STG C T Lead Temperature: 0.063 from Case for 10 Sec. 300 L 1 I Amps (Repetitive and Non-Repetitive) Avalanche Current 52 AR 1 E Repetitive Avalanche Energy 50 AR mJ 4 E Single Pulse Avalanche Energy 3200 AS STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT BV Drain-Source Breakdown Voltage (V = 0V, I = 250A) 800 Volts DSS GS D 2 R Drain-Source On-State Resistance (V = 10V, 26A) 0.160 Ohms DS(on) GS Zero Gate Voltage Drain Current (V = 800V, V = 0V) 250 DS GS I A DSS Zero Gate Voltage Drain Current (V = 640V, V = 0V, T = 125C) 1000 DS GS C I Gate-Source Leakage Current (V = 30V, V = 0V) nA 100 GSS GS DS Gate Threshold Voltage (V = V , I = 5mA) V Volts 35 GS(th) DS GS D CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - DYNAMIC CHARACTERISTICS APT8014L2FLL(G) Symbol Characteristic MIN TYP MAX UNIT Test Conditions C Input Capacitance V = 0V 7238 iss GS V = 25V C pF 1402 Output Capacitance DS oss f = 1 MHz C Reverse Transfer Capacitance 248 rss Q 3 Total Gate Charge V = 10V 285 g GS Q V = 400V nC Gate-Source Charge DD 30 gs I = 52A 25C D Q Gate-Drain Mille) Charge 170 gd RESISTIVE SWITCHING t Turn-on Delay Time 20 d(on) V = 15V GS t 19 Rise Time r ns V = 400V DD t Turn-off Delay Time 69 d(off) I = 52A 25C D t Fall Time R = 0.6 15 f G INDUCTIVE SWITCHING 25C E 6 Turn-on Switching Energy 1091 on V = 533V, V = 15V DD GS E Turn-off Switching Energy = 52A, R = 3 I 1135 off D G J INDUCTIVE SWITCHING 125C 6 E Turn-on Switching Energy 1662 on V = 533V V = 15V DD GS E Turn-off Switching Energy I = 52A, R = 3 1383 off D G SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT I Continuous Source Current (Body Diode) 52 S Amps I 1 SM Pulsed Source Current (Body Diode) 208 2 V Volts SD Diode Forward Voltage (V = 0V, I = -52A) 1.3 GS S dv / dv 5 V/ns Peak Diode Recovery / 18 dt dt Reverse Recovery Time T = 25C 440 j t ns rr di (I = -52A, / = 100A/s) S dt T = 125C 1100 j Reverse Recovery Charge T = 25C 2.0 j C Q rr di (I = -52A, / = 100A/s) S dt T = 125C 13 j Peak Recovery Current T = 25C 15 j I Amps RRM di (I = -52A, / = 100A/s) S dt T = 125C 30 j THERMAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX UNIT R Junction to Case 0.14 JC C/W R Junction to Ambient 40 JA 1 Repetitive Rating: Pulse width limited by maximum junction 4 Starting T = +25C, L = 2.37mH, R = 25, Peak I = 52A j G L dv temperature 5 / numbers reflect the limitations of the test circuit rather than the dt di 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% device itself. I -I 52A / 700A/s V 800V T 150C dt S D R J 3 See MIL-STD-750 Method 3471 6 Eon includes diode reverse recovery. See figures 18, 20. Microsemi reserves the right to change, without notice, the specifications and information contained herein. 0.16 0.14 0.9 0.12 0.7 0.10 0.08 Note: 0.5 0.06 t 1 0.3 t 2 0.04 t 1 Duty Factor D = / t 2 0.02 Peak T = P x Z + T 0.1 J DM JC C 0.05 SINGLE PULSE 0 -5 -4 -3 -2 -1 10 10 10 10 10 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 050-7104 Rev B 5-2006 Z , THERMAL IMPEDANCE (C/W) JC P DM