APT8030LVFR 800V 27A 0.300 FREDFET POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Tested D FREDFET Lower Leakage Popular TO-264 Package G Faster Switching S MAXIMUM RATINGS All Ratings: T = 25C unless otherwise specified. C Symbol Parameter APT8030LVFR UNIT V Drain-Source Voltage 800 Volts DSS I Continuous Drain Current T = 25C 27 D C Amps 1 I Pulsed Drain Current 108 DM V Gate-Source Voltage Continuous 30 GS Volts V Gate-Source Voltage Transient 40 GSM Total Power Dissipation T = 25C 520 Watts C P D Linear Derating Factor 4.16 W/C T ,T Operating and Storage Junction Temperature Range -55 to 150 J STG C T Lead Temperature: 0.063 from Case for 10 Sec. 300 L 1 I Avalanche Current (Repetitive and Non-Repetitive) 27 Amps AR 1 E 50 Repetitive Avalanche Energy AR mJ 4 E Single Pulse Avalanche Energy 2500 AS STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT BV Drain-Source Breakdown Voltage (V = 0V, I = 250A) 800 Volts DSS GS D 2 I On State Drain Current (V > I x R Max, V = 10V) Amps 27 D(on) DS D(on) DS(on) GS 2 R Drain-Source On-State Resistance (V = 10V, 0.5 I ) Ohms 0.300 DS(on) GS D Cont. Zero Gate Voltage Drain Current (V = V , V = 0V) 250 DS DSS GS I A DSS Zero Gate Voltage Drain Current (V = 0.8 V , V = 0V, T = 125C) 1000 DS DSS GS C I Gate-Source Leakage Current (V = 30V, V = 0V) nA 100 GSS GS DS V Gate Threshold Voltage (V = V , I = 2.5mA) Volts 24 GS(th) DS GS D CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - DYNAMIC CHARACTERISTICS APT8030LVFR Symbol Characteristic Test Conditions MIN TYP MAX UNIT C Input Capacitance 6600 7900 iss V = 0V GS C Output Capacitance V = 25V 645 900 pF oss DS f = 1 MHz C Reverse Transfer Capacitance 320 480 rss 3 Q V = 10V Total Gate Charge 340 510 g GS V = 0.5 V Q Gate-Source Charge 31 47 nC DD DSS gs I = I Cont. 25C Q Gate-Drain Mille) Charge 170 250 D D gd t (on) Turn-on Delay Time V = 15V 16 32 d GS t Rise Time V = 0.5 V 14 28 r DD DSS ns I = I Cont. 25C t (off) Turn-off Delay Time D D 59 90 d R = 0.6 t Fall Time G 816 f SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT I Continuous Source Current (Body Diode) 27 S Amps 1 I Pulsed Source Current (Body Diode) 108 SM 2 Diode Forward Voltage (V = 0V, I = -I Cont. ) Volts V 1.3 SD GS S D dv 5 dv / Peak Diode Recovery / 5 V/ns dt dt Reverse Recovery Time T = 25C 300 j t ns rr di (I = -I Cont. , / = 100A/s) S D dt T = 125C 600 j Reverse Recovery Charge T = 25C 2.0 j Q C rr di (I = -I Cont. , / = 100A/s) S D dt T = 125C 6.7 j Peak Recovery Current T = 25C 13 j I Amps RRM di (I = -I Cont. , / = 100A/s) S D dt T = 125C 22 j THERMAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX UNIT R Junction to Case 0.24 JC C/W R Junction to Ambient 40 JA 1 3 Repetitive Rating: Pulse width limited by maximum junction See MIL-STD-750 Method 3471 4 temperature. Starting T = +25C, L = 6.86mH, R = 25, Peak I = 27A j G L 2 5 di Pulse Test: Pulse width < 380 S, Duty Cycle < 2% I -I Cont. , / = 100A/s, V V , T 150C, R = 2.0, S D DD DSS j G dt V = 200V. R APT Reserves the right to change, without notice, the specifications and information contained herein. 0.3 D=0.5 0.1 0.2 0.05 0.1 0.05 Note: 0.01 0.02 t 1 0.005 0.01 t 2 SINGLE PULSE t 1 Duty Factor D = / t 2 Peak T = P x Z + T J DM JC C 0.001 -5 -4 -3 -2 -1 10 10 10 10 10 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 050-5592 Rev B Z , THERMAL IMPEDANCE (C/W) JC P DM