APT8052BFLL APT8052SFLL 800V 15A 0.520 R POWER MOS 7 FREDFET BFLL 3 D PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel TO-247 enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering R DS(ON) and Q . Power MOS 7 combines lower conduction and switching losses SFLL g along with exceptionally fast switching speeds inherent with APT s patented metal gate structure. Lower Input Capacitance Increased Power Dissipation D Lower Miller Capacitance Easier To Drive 3 Lower Gate Charge, Qg TO-247 or Surface Mount D PAK Package G FAST RECOVERY BODY DIODE S MAXIMUM RATINGS All Ratings: T = 25C unless otherwise specified. C Symbol Parameter APT8052BFLL SFLL UNIT V Drain-Source Voltage 800 Volts DSS I Continuous Drain Current T = 25C 15 D C Amps 1 I Pulsed Drain Current 60 DM V Gate-Source Voltage Continuous 30 GS Volts V Gate-Source Voltage Transient GSM 40 Total Power Dissipation T = 25C Watts C 298 P D Linear Derating Factor W/C 2.38 T ,T Operating and Storage Junction Temperature Range -55 to 150 J STG C T Lead Temperature: 0.063 from Case for 10 Sec. 300 L 1 I Amps Avalanche Current (Repetitive and Non-Repetitive) 15 AR 1 E Repetitive Avalanche Energy 30 AR mJ 4 E Single Pulse Avalanche Energy 1210 AS STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT BV Drain-Source Breakdown Voltage (V = 0V, I = 250A) 800 Volts DSS GS D 2 R Drain-Source On-State Resistance (V = 10V, I = 7.5A) 0.520 Ohms DS(on) GS D Zero Gate Voltage Drain Current (V = 800V, V = 0V) 250 DS GS I A DSS Zero Gate Voltage Drain Current (V = 640V, V = 0V, T = 125C) 1000 DS GS C I Gate-Source Leakage Current (V = 30V, V = 0V) nA 100 GSS GS DS Gate Threshold Voltage (V = V , I = 1mA) V Volts 35 DS GS D GS(th) CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - APT8052BFLL SFLL DYNAMIC CHARACTERISTICS Symbol MIN TYP MAX Characteristic Test Conditions UNIT C Input Capacitance V = 0V 2035 iss GS V = 25V C pF Output Capacitance DS 405 oss f = 1 MHz C Reverse Transfer Capacitance 60 rss Q 3 Total Gate Charge V = 10V 75 g GS V = 400V Q nC Gate-Source Charge DD 11 gs I = 15A 25C D Q Gate-Drain Mille) Charge 50 gd RESISTIVE SWITCHING t 9 Turn-on Delay Time d(on) V = 15V GS t 6 Rise Time r ns V = 400V DD t 23 Turn-off Delay Time d(off) I = 15A 25C D t R = 1.6 Fall Time 7 f G INDUCTIVE SWITCHING 25C 6 E Turn-on Switching Energy 215 on V = 533V, V = 15V DD GS E Turn-off Switching Energy I = 15A, R = 5 90 off D G J INDUCTIVE SWITCHING 125C 6 E 420 Turn-on Switching Energy on V = 533V V = 15V DD GS E Turn-off Switching Energy I = 15A, R = 5 110 off D G SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT I S Continuous Source Current (Body Diode) 15 Amps I 1 (Body Diode) SM Pulsed Source Current 60 V 2 Volts SD Diode Forward Voltage (V = 0V, I = -15A) 1.3 GS S dv dv 5 / Peak Diode Recovery / V/ns dt 18 dt Reverse Recovery Time T = 25C 200 j t rr ns di (I = -15A, / = 100A/s) S dt T = 125C 350 j Reverse Recovery Charge T = 25C 0.69 j C Q rr di (I = -15A, / = 100A/s) S dt T = 125C 2.66 j Peak Recovery Current T = 25C 8 j I Amps RRM di (I = -15A, / = 100A/s) S dt T = 125C 14 j THERMAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX UNIT R Junction to Case 0.42 JC C/W R Junction to Ambient 40 JA 1 Repetitive Rating: Pulse width limited by maximum junction 4 Starting T = +25C, L = 10.76mH, R = 25, Peak I = 15A j G L dv temperature 5 / numbers reflect the limitations of the test circuit rather than the dt di 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% device itself. I -I 15A / 700A/s V 800 T 150C dt S D R J 3 See MIL-STD-750 Method 3471 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and information contained herein. 0.45 0.40 0.9 0.35 0.7 0.30 0.25 0.5 0.20 Note: 0.15 t 1 0.3 t 0.10 2 SINGLE PULSE t 1 Duty Factor D = / t 0.1 2 0.05 Peak T = P x Z + T J DM JC C 0.05 0 -5 -4 -3 -2 -1 10 10 10 10 10 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 050-7059 Rev B 7-2004 Z , THERMAL IMPEDANCE (C/W) JC P DM