APT84F50B2 APT84F50L 500V, 84A, 0.065 Max, t 320ns rr N-Channel FREDFET TM T-Ma x TO-264 Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low CMille capaci- rss tance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control slew rates during switching, resulting in low EMI and reliable paralleling, APT84F50B2 APT84F50L even when switching at very high frequency. Reliability in yback, boost, forward, and other circuits is enhanced by the high avalanche energy capability. Single die FREDFET FEATURES TYPICAL APPLICATIONS Fast switching with low EMI ZVS phase shifted and other full bridge Low t for high reliability Half bridge rr Ultra low C for improved noise immunity PFC and other boost converter rss Low gate charge Buck converter Avalanche energy rated Single and two switch forward RoHS compliant Flyback Absolute Maximum Ratings Symbol Parameter Ratings Unit Continuous Drain Current T = 25C 84 C I D Continuous Drain Current T = 100C 53 A C 1 I Pulsed Drain Current 270 DM V Gate-Source Voltage 30 V GS E 2 1845 Single Pulse Avalanche Energy mJ AS I 42 AR Avalanche Current, Repetitive or Non-Repetitive A Thermal and Mechanical Characteristics Min Typ Max Unit Symbol Characteristic P Total Power Dissipation T = 25C 1135 W D C R 0.11 Junction to Case Thermal Resistance JC C/W R 0.11 Case to Sink Thermal Resistance, Flat, Greased Surface CS T ,T Operating and Storage Junction Temperature Range -55 150 J STG C T Soldering Temperature for 10 Seconds (1.6mm from case) 300 L oz 0.22 W Package Weight T g 6.2 inlbf 10 Torque Mounting Torque ( TO-264 Package), 4-40 or M3 screw 1.1 Nm Microsemi Website - Static Characteristics T = 25C unless otherwise speci ed APT84F50B2 L J Symbol Parameter Test Conditions Min Typ Max Unit V V = 0V, I = 250A Drain-Source Breakdown Voltage 500 V BR(DSS) GS D V /T Reference to 25C, I = 250A Breakdown Voltage Temperature Coef cient 0.60 V/C BR(DSS) J D V = 10V, I = 42A R 3 Drain-Source On Resistance 0.055 0.065 DS(on) GS D V Gate-Source Threshold Voltage 2.5 4 5 V GS(th) V = V , I = 2.5mA GS DS D V /T Threshold Voltage Temperature Coef cient -10 mV/C GS(th) J V = 500V T = 25C 250 DS J I Zero Gate Voltage Drain Current A DSS V = 0V T = 125C 1000 GS J I V = 30V Gate-Source Leakage Current 100 nA GSS GS Dynamic Characteristics T = 25C unless otherwise speci ed J Symbol Parameter Test Conditions Min Typ Max Unit g V = 50V, I = 42A fs Forward Transconductance 65 S DS D C Input Capacitance 13500 iss V = 0V, V = 25V GS DS C Reverse Transfer Capacitance 185 rss f = 1MHz C Output Capacitance 1455 oss pF 4 C Effective Output Capacitance, Charge Related 845 o(cr) V = 0V, V = 0V to 333V GS DS 5 C Effective Output Capacitance, Energy Related 425 o(er) Q Total Gate Charge 340 g V = 0 to 10V, I = 42A, GS D Q Gate-Source Charge 75 nC gs V = 250V DS Q Gate-Drain Charge gd 155 t Resistive Switching Turn-On Delay Time 60 d(on) t V = 333V, I = 42A Current Rise Time 70 r DD D ns 6 t R = 2.2 , V = 15V Turn-Off Delay Time 155 d(off) G GG t Current Fall Time 50 f Source-Drain Diode Characteristics Symbol Parameter Test Conditions Min Typ Max Unit Continuous Source Current MOSFET symbol I S 84 showing the (Body Diode) integral reverse p-n A Pulsed Source Current junction diode I 270 SM (body diode) 1 (Body Diode) V I = 42A, T = 25C, V = 0V Diode Forward Voltage 1. 2 V SD SD J GS T = 25C 282 320 J t Reverse Recovery Time ns rr T = 125C 499 600 J 3 I = 42A T = 25C 1.67 SD J Q Reverse Recovery Charge C rr di /dt = 100A/s T = 125C 4.36 SD J V = 100V T = 25C 12 DD J I Reverse Recovery Current A rrm T = 125C 17.8 J I 42A, di/dt 1000A/s, V = 333V, SD DD dv/dt Peak Recovery dv/dt 20 V/ns T = 125C J 1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Starting at T = 25C, L = 2.08mH, R = 25, I = 42A. J G AS 3 Pulse test: Pulse Width < 380s, duty cycle < 2%. 4 C is de ned as a xed capacitance with the same stored charge as C with V = 67% of V . o(cr) OSS DS (BR)DSS 5 C is de ned as a xed capacitance with the same stored energy as C with V = 67% of V . To calculate C for any value of o(er) OSS DS (BR)DSS o(er) V less than V use this equation: C = -3.14E-7/V 2 + 7.31E-8/V + 2.09E-10. DS (BR)DSS, o(er) DS DS 6 R is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) G Microsemi reserves the right to change, without notice, the speci cations and information contained herein. 050-8176 Rev C 9-2011