APT94N65B2C6 APT94N65LC6 650V 94A 0.035 APT94N65B2C6 Super Junction MOSFET T-Max TO-264 Ultra Low R DS(ON) Low Miller Capacitance Ultra Low Gate Charge, Q g Avalanche Energy Rated APT94N65LC6 dv Extreme / Rated dt D G Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with S two parallel MOSFET die. It is intended for switch-mode operation. It is not suitable for linear mode operation. MAXIMUM RATINGS All Ratings per die: T = 25C unless otherwise speci ed. C Symbol Parameter APT94N65B2 LC6 UNIT Drain-Source Voltage 650 Volts V DSS 1 95 Continuous Drain Current T = 25C C I D 61 Amps Continuous Drain Current T = 100C C 2 282 I Pulsed Drain Current DM Gate-Source Voltage Continuous 20 Volts V GS 833 Watts P Total Power Dissipation T = 25C D C Operating and Storage Junction Temperature Range -55 to 150 T ,T J STG C Lead Temperature: 0.063 from Case for 10 Sec. 260 T L 2 9.3 Amps I Avalanche Current AR 3 1.76 E Repetitive Avalanche Energy ( Id = 9.3A, Vdd = 50V ) AR mJ 1160 E Single Pulse Avalanche Energy ( Id = 9.3A, Vdd = 50V ) AS STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT 650 Volts BV Drain-Source Breakdown Voltage (V = 0V, I = 2.0mA) (DSS) GS D 4 0.03 0.035 Ohms R Drain-Source On-State Resistance (V = 10V, I = 35.2A) DS(on) GS D 1.0 50 Zero Gate Voltage Drain Current (V = 650V, V = 0V) DS GS A I DSS 100 Zero Gate Voltage Drain Current (V = 650V, V = 0V, T = 150C) DS GS C 200 nA I Gate-Source Leakage Current (V = 20V, V = 0V) GSS GS DS 2.5 3 3.5 Volts V Gate Threshold Voltage (V = V , I = 3.5mA) GS(th) DS GS D CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.COOLMOS comprise a new family of transistors developed by In neon Technologies AG.COOLMO is a trade- mark of In neon Technologies AG Microsemi Website - APT94N65B2 LC6 DYNAMIC CHARACTERISTICS Symbol Characteristic Test Conditions MIN TYP MAX UNIT C Input Capacitance 8140 iss V = 0V GS C 5451 Output Capacitance V = 25V pF oss DS f = 1 MHz C 603 Reverse Transfer Capacitance rss 5 Q 320 Total Gate Charge g V = 10V GS Q 50 Gate-Source Charge V = 300V nC gs DD I = 94A 25C D Q 168 Gate-Drain Mille) Charge gd t 26 Turn-on Delay Time d(on) INDUCTIVE SWITCHING V = 15V t Rise Time GS 59 r V = 400V ns DD t 323 Turn-off Delay Time d(off) I = 94A 25C D t R = 4.3 172 Fall Time f G 6 E INDUCTIVE SWITCHING 25C 2916 Turn-on Switching Energy on V = 400V, V = 15V DD GS E 3257 Turn-off Switching Energy off I = 94A, R = 4.3 D G J 6 E 3947 Turn-on Switching Energy INDUCTIVE SWITCHING 125C on V = 400V, V = 15V DD GS E 4034 off Turn-off Switching Energy I =94A, R = 4.3 D G SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions MIN TYP MAX UNIT I Continuous Source Current (Body Diode) 92.6 S Amps 2 I Pulsed Source Current (Body Diode) 282 SM 4 V Diode Forward Voltage (V = 0V, I = -52.4A) 0.9 1.2 Volts SD GS S dv dv 7 / Peak Diode Recovery / 15 V/ns dt dt Reverse Recovery Time t T 1063 ns di = 25C rr j (I = -94A, / = 100A/ s) S dt Reverse Recovery Charge Q T 39 C = 25C rr di j (I = -94A, / = 100A/ s) S dt Peak Recovery Current I T 63 Amps di = 25C RRM j (I = -94A, / = 100A/ s) S dt THERMAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX UNIT R Junction to Case 0.15 C/W JC R Junction to Ambient 31 JA 1 Continuous current limited by package lead temperature. 4 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 2 Repetitive Rating: Pulse width limited by maximum junction temperature 5 See MIL-STD-750 Method 3471 3 Repetitive avalanche causes additional power losses that can be calculated as 6 Eon includes diode reverse recovery. P = E *f . Pulse width tp limited by Tj max. AV AR 7 Maximum diode commutation speed = di/dt 300A/ s Microsemi reserves the right to change, without notice, the speci cations and information contained herein. 0.16 D = 0.9 0.14 0.12 0.7 0.10 0.5 0.08 Note: 0.06 t 1 0.3 0.04 t 2 t 1 t Duty Factor D = / 2 0.02 0.1 Peak T = P x Z + T J DM JC C SINGLE PULSE 0.05 0 -2 -5 -4 -3 10 10 0.1 1 10 10 10 RECTANGULAR PULSE DURATION (SECONDS) Figure 1, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration 050-7214 Rev A 4-2012 Z , THERMAL IMPEDANCE (C/W) JC P DM