APTDR90X1601G Microchip

APTDR90X1601G V = 1600V 3 Phase rectifier bridge RRM I = 90A Tc = 80C C Power Module 1 2 Application Input rectifiers for inverter 9 11 7 Battery DC power supply 10 12 8 Features High blocking voltage High surge current Low leakage current Very low stray inductance 5 6 - Symmetrical design High level of integration Benefits Solderable terminals for easy PCB mounting Direct mounting to heatsink (isolated package) Low profile RoHS compliant All multiple inputs and outputs must be shorted together 1/2 5/6 7/8 9/10 11/12 Absolute maximum ratings Symbol Parameter Max ratings Unit V Maximum DC reverse Voltage R 1600 V V Maximum Peak Repetitive Reverse Voltage RRM I DC Forward Current T = 80C 90 F C A T = 45C I Non-Repetitive Forward Surge Current t=10ms 850 FSM J These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com 1-4 www.microsemi.com APTDR90X1601G Rev 2 October, 2012 APTDR90X1601G All ratings T = 25C unless otherwise specified j Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit T = 25C 50 A j I Reverse Current V = 1600V R R T = 125C 4 mA j T = 25C j 1.3 V Forward Voltage I = 90A V F F T = 125C 1.1 j V On state Voltage 0.8 V T r On state Slope resistance 4.8 m T Thermal and package characteristics Symbol Characteristic Min Typ Max Unit R Junction to Case Thermal Resistance 0.85 C/W thJC RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz V 4000 V ISOL T Operating junction temperature range -40 150 J C T Storage Temperature Range -40 125 STG T Operating Case Temperature -40 100 C Torque Mounting torque To heatsink M4 2 3 N.m g Wt Package Weight 80 SP1 Package outline (dimensions in mm) See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com 2-4 www.microsemi.com APTDR90X1601G Rev 2 October, 2012