Features
Low-voltage Operation
= 1.8V to 3.6V)
1.8V (V
CC
2.5V (V = 2.5V to 5.5V)
CC
Internally Organized 131,072 x 8
Two-wire Serial Interface
Schmitt Triggers, Filtered Inputs for Noise Suppression
Bidirectional Data Transfer Protocol
400 kHz (1.8V) and 1 MHz (5V, 2.5V) Clock Rate
Two-wire Serial
Write Protect Pin for Hardware and Software Data Protection
256-byte Page Write Mode (Partial Page Writes Allowed)
EEPROM
Random and Sequential Read Modes
Self-timed Write Cycle (5 ms Typical)
1M (131,072 x 8)
High Reliability
Endurance: 1,000,000 Write Cycles/Page
Data Retention: 40 Years
8-lead PDIP, 8-lead JEDEC SOIC, 8-lead EIAJ SOIC, 8-lead TSSOP, 8-lead Ultra Thin AT24C1024B
Small Array (SAP), and 8-ball dBGA2 Packages
with Two Device
Die Sales: Wafer Form, Tape and Reel and Bumped Die
Address Inputs
Description
The AT24C1024B provides 1,048,576 bits of serial electrically erasable and program-
mable read only memory (EEPROM) organized as 131,072 words of 8 bits each. The
devices cascadable feature allows up to four devices to share a common two-wire
bus. The device is optimized for use in many industrial and commercial applications
where low-power and low-voltage operation are essential. The devices are available
in space-saving 8-lead PDIP, 8-lead JEDEC SOIC, 8-lead EIAJ SOIC, 8-lead TSSOP,
8-ball dBGA2 and 8-lead Ultra Thin SAP packages. In addition, the entire family is
available in 1.8V (1.8V to 3.6V) and 2.5V (2.5V to 5.5V) versions.
8-lead PDIP
NC 1 8 VCC
8-lead SOIC
A1 2 7 WP
A2 3 6 SCL
NC 1 8 VCC
GND 4 5 SDA
A1 2 7 WP
A2 3 6 SCL
8-lead TSSOP
GND 4 5 SDA
NC 1 8 VCC
A1 2 7 WP
8-lead dBGA2
A2 3 6 SCL
GND 4 5 SDA
8 1
VCC NC
WP 7 2 A1
6 3 A2
SCL
8-lead Ultra-Thin SAP
SDA 5 4 GND
VCC 8 1 NC
Bottom View
WP 7 2 A1
SCL 6 3 A2
SDA 5 4 GND
Rev. 5194FSEEPR1/08
Bottom ViewTable 0-1. Pin Configurations
Pin Name Function
A1 Address Input
A2 Address Input
SDA Serial Data
SCL Serial Clock Input
WP Write Protect
NC No Connect
1. Absolute Maximum Ratings*
*NOTICE: Stresses beyond those listed under Absolute
Operating Temperature..................................55C to +125 C
Maximum Ratings may cause permanent dam-
age to the device. This is a stress rating only and
Storage Temperature .....................................65C to +150 C
functional operation of the device at these or any
Voltage on Any Pin other conditions beyond those indicated in the
with Respect to Ground ....................................1.0V to +7.0V operational sections of this specification is not
implied. Exposure to absolute maximum rating
Maximum Operating Voltage .......................................... 6.25V
conditions for extended periods may affect
device reliability.
DC Output Current........................................................ 5.0 mA
2
AT24C1024B
5194FSEEPR1/08