AT49BV320D-70TU Microchip

Features Single Voltage Read/Write Operation: 2.65V to 3.6V Access Time 70 ns Sector Erase Architecture Sixty-three 32K Word (64K Bytes) Sectors with Individual Write Lockout Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout Fast Word Program Time 10 s Fast Sector Erase Time 100 ms Suspend/Resume Feature for Erase and Program 32-megabit Supports Reading and Programming from Any Sector by Suspending Erase of a Different Sector (2M x 16) Supports Reading Any Word by Suspending Programming of Any Other Word Low-power Operation 3-volt Only 10 mA Active 15 A Standby Flash Memory VPP Pin for Write Protection and Accelerated Program Operation WP Pin for Sector Protection RESET Input for Device Initialization AT49BV320D Flexible Sector Protection TSOP and CBGA Package Options AT49BV320DT Top or Bottom Boot Block Configuration Available 128-bit Protection Register Minimum 100,000 Erase Cycles Common Flash Interface (CFI) Green (Pb/Halide-free) Packaging 1. Description The AT49BV320D(T) is a 2.7-volt 32-megabit Flash memory organized as 2,097,152 words of 16 bits each. The memory is divided into 71 sectors for erase operations. The device is offered in a 48-lead TSOP package and a 47-ball CBGA package. The device has CE and OE control signals to avoid any bus contention. This device can be read or reprogrammed using a single power supply, making it ideally suited for in-sys- tem programming. The device powers on in the read mode. Command sequences are used to place the device in other operation modes such as program and erase. The device has the capability to protect the data in any sector (see Flexible Sector Protection on page 6). To increase the flexibility of the device, it contains an Erase Suspend and Program Suspend feature. This feature will put the erase or program on hold for any amount of time and let the user read data from or program data to any of the remaining sectors within the memory. The VPP pin provides data protection. When the V input is below 0.4V, the program PP and erase functions are inhibited. When V is at 1.65V or above, normal program PP and erase operations can be performed. With V at 10.0V, the program (Dual-word PP Program command) operation is accelerated. 3581DFLASH2/062. Pin Configurations Pin Name Function A0 - A20 Addresses CE Chip Enable OE Output Enable WE Write Enable RESET Reset VPP Write Protection I/O0 - I/O15 Data Inputs/Outputs NC No Connect VCCQ Output Power Supply WP Write Protect 2.1 TSOP Top View (Type 1) A15 1 48 A16 A14 2 47 VCCQ A13 3 46 GND A12 4 45 I/O15 A11 5 44 I/O7 A10 6 43 I/O14 A9 7 42 I/O6 A8 8 41 I/O13 NC 9 40 I/O5 A20 10 39 I/O12 WE 11 38 I/O4 RESET 12 37 VCC VPP 13 36 I/O11 WP 14 35 I/O3 A19 15 34 I/O10 A18 16 33 I/O2 A17 17 32 I/O9 A7 18 31 I/O1 A6 19 30 I/O8 A5 20 29 I/O0 A4 21 28 OE A3 22 27 GND A2 23 26 CE A1 24 25 A0 2.2 CBGA Top View (Ball Down) 1 234567 8 A A13 A11 A8 VPP WP A19 A7 A4 B A14 A10 WE RST A18 A2 A17 A5 C A15 A12 A9 A20 A6 A3 A1 D A16 I/O14 I/O5 I/O11 I/O2 I/O8 CE A0 E VCCQ I/O15 I/O6 I/O12 I/O3 I/O9 I/O0 GND F GND I/O7 I/O13 I/O4 VCC I/O10 I/O1 OE 2 AT49BV320D(T) 3581DFLASH2/06