MT29F2G16ABAEAWP:E Micron

Micron Confidential and Proprietary 2Gb: x8, x16 NAND Flash Memory Features NAND Flash Memory MT29F2G08ABAEAH4, MT29F2G08ABAEAWP, MT29F2G08ABBEAH4, MT29F2G08ABBEAHC, MT29F2G16ABAEAWP, MT29F2G16ABBEAH4 MT29F2G16ABBEAHC First block (block address 00h) is valid when ship- Features ped from factory with ECC. For minimum required 1 Open NAND Flash Interface (ONFI) 1.0-compliant ECC, see Error Management. Single-level cell (SLC) technology Block 0 requires 1-bit ECC if PROGRAM/ERASE cy- Organization cles are less than 1000 Page size x8: 2112 bytes (2048 + 64 bytes) RESET (FFh) required as first command after pow- Page size x16: 1056 words (1024 + 32 words) er-on Block size: 64 pages (128K + 4K bytes) Alternate method of device initialization (Nand In- Plane size: 2 planes x 1024 blocks per plane it) after power up (contact factory) Device size: 2Gb: 2048 blocks Internal data move operations supported within the Asynchronous I/O performance plane from which data is read t t RC/ WC: 20ns (3.3V), 25ns (1.8V) Quality and reliability Array performance Data retention: 10 years 3 Read page: 25s Endurance: 100,000 PROGRAM/ERASE cycles 3 Program page: 200s (TYP: 1.8V, 3.3V) Operating voltage range Erase block: 700s (TYP) V : 2.73.6V CC Command set: ONFI NAND Flash Protocol V : 1.71.95V CC Advanced command set Operating temperature 4 Program page cache mode Commercial: 0C to +70C 4 Read page cache mode Industrial (IT): 40C to +85C One-time programmable (OTP) mode Automotive Industrial (AIT): 40C to +85C 4 Two-plane commands Automotive (AT): 40C to +105C Interleaved die (LUN) operations Automotive Certified (AAT): 40C to +105C Read unique ID Package 2 Block lock (1.8V only) 48-pin TSOP type 1, CPL Internal data move 63-ball VFBGA Operation status byte provides software method for detecting 1. The ONFI 1.0 specification is available at Notes: Operation completion www.onfi.org. Pass/fail condition 2. CPL = Center parting line. Write-protect status 3. See Electrical Specifications Program/Erase t t Ready/Busy (R/B ) signal provides a hardware Characteristics for R ECC and PROG ECC specifications. method of detecting operation completion WP signal: Write protect entire device 4. These commands supported only with ECC disabled. PDF: 09005aef83b83f42 Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 m69a 2gb ecc nand.pdf - Rev. T 02/18 EN 2014 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.Micron Confidential and Proprietary 2Gb: x8, x16 NAND Flash Memory Features Part Numbering Information Micron NAND Flash devices are available in different configurations and densities. Verify valid part numbers by using Microns part catalog search at www.micron.com. To compare features and specifications by device type, visit www.micron.com/products. Contact the factory for devices not found. Figure 1: Marketing Part Number Chart MT 29F 2G 08 A B A E A WP- IT ES :E Design Revision (shrink) Micron Technology Production Status Product Family Blank = Production 29F = NAND Flash memory ES = Engineering sample MS = Mechanical sample Density QS = Qualification sample 2G = 2Gb Device Width Special Options 08 = 8-bit Blank 16 = 16-bit X = Product longevity program (PLP) Level Operating Temperature Range Blank = Commercial (0C to +70C) A = SLC IT = Industrial (40C to +85C) AIT = Automotive Industrial (40C to +85C) Classification AAT = Automotive Certified (40C to +115C) Mark Die nCE RnB I/O Channels AT = Automotive (40C to +115C) B 1 1 1 1 Speed Grade Operating Voltage Range Blank A = 3.3V (2.73.6V) B = 1.8V (1.71.95V) Package Code WP = 48-pin TSOP Feature Set HC = 63-ball VFBGA (10.5 x 13 x 1.0mm) E = Feature set E H4 = 63-ball VFBGA (9 x 11 x 1.0mm) Interface A = Async only PDF: 09005aef83b83f42 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 m69a 2gb ecc nand.pdf - Rev. T 02/18 EN 2014 Micron Technology, Inc. All rights reserved.