DSC1123DI2-086.0000T Microchip

DSC1103/23 Low-Jitter Precision LVDS Oscillator Features General Description Low RMS Phase Jitter: <1 ps (typ.) The DSC1103 and DSC1123 series of high performance oscillators utilizes a proven silicon MEMS High Stability: 10 ppm, 25 ppm, 50 ppm technology to provide excellent jitter and stability over Wide Temperature Range: a wide range of supply voltages and temperatures. By - Ext. Industrial 40C to +105C eliminating the need for quartz or SAW technology, - Industrial 40C to +85C MEMS oscillators significantly enhance reliability and - Ext. Commercial 20C to +70C accelerate product development, while meeting stringent clock performance criteria for a variety of High Supply Noise Rejection: 50 dBc communications, storage, and networking applications. Wide Frequency Range: DSC1103 has a standby feature allowing it to - 2.3 MHz 460 MHz completely power-down when EN pin is pulled low. For Small Industry Standard Footprints DSC1123, only the outputs are disabled when EN is - 2.5 mm x 2.0 mm low. Both oscillators are available in industry standard - 3.2 mm x 2.5 mm packages, including the smallest 2.5 mm x 2.0 mm, - 5.0 mm x 3.2 mm and are drop-in replacements for standard 6-pin LVDS - 7.0 mm x 5.0 mm crystal oscillators. Excellent Shock and Vibration Immunity Block Diagram - Qualified to MIL-STD-883 High Reliability - 20x better MTF than quartz-based devices Pin 1 Pin 6 Low Current Consumption Temp. Sensor & Enable V DD Supply Range of 2.25V to 3.63V Compensation Circuitry Standby and Output Enable Functions Pin 2 Pin 5 Lead Free and RoHS-Compliant NC Output MEMS Divider PLL Oscillator Driver Applications Storage Area Networks Pin 3 Pin 4 GND Output - SATA, SAS, Fibre Channel Passive Optical Networks - EPON, 10G-EPON, GPON, 10G-PON HD/SD/SDI Video and Surveillance PCI Express Gen 1/Gen 2/Gen 3 Display Port 2017 Microchip Technology Inc. DS20005745A-page 1DSC1103/23 1.0 ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings Supply Voltage .......................................................................................................................................... 0.3V to +4.0V Input Voltage .......................................................................................................................................0.3V to V +0.3V DD ESD Protection (HBM) ...............................................................................................................................................4 kV ESD Protection (MM) ................................................................................................................................................400V ESD Protection (CDM) ............................................................................................................................................1.5 kV Notice: Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational sections of this specification is not intended. Exposure to maximum rating conditions for extended periods may affect device reliability. ELECTRICAL CHARACTERISTICS Specifications: V = 3.3V T = +25C unless otherwise specified. DD A Parameters Sym. Min. Typ. Max. Units Conditions Supply Voltage (Note 1)V 2.25 3.63 V DD DSC1103, EN pin low all 0.095 outputs disabled. Supply Current I mA DD DSC1123, EN pin low all 20 22 outputs disabled. 10 Includes frequency variations due to initial 25 Frequency Stability f ppm tolerance, temp., and power 50 supply voltage. Aging - First Year f 5 ppm One year at +25C Y1 Year two and beyond at Aging - After First Year f <1 ppm/yr Y2+ +25C 5 ms T = +25C Start-up Time (Note 2)t SU V 0.75 x V Input logic high IH DD Input Logic Levels V V 0.25 x V Input logic low IL DD Output Disable Time (Note 3)t 5 ns DA 5 ms DSC1103 Output Enable Time t EN 20 ns DSC1123 Enable Pull-Up Resistor R 40 k Pull-up resistor exist. PU (Note 4) LVDS Outputs Supply Current I 29 32 mA Output enabled, R = 100 DD L Output Offset Voltage V 1.125 1.4 V R = 100 Differential OS Delta Offset Voltage V 50 mV OS Peak-to-Peak Output Swing V 350 mV Single-Ended PP Note 1: V pin should be filtered with a 0.1 F capacitor. DD 2: t is time to 100 ppm stable output frequency after V is applied and outputs are enabled. SU DD 3: See the Output Waveform section and the Test Circuit for more information. 4: Output is enabled if pad is floated or not connected. DS20005745A-page 2 2017 Microchip Technology Inc.