HV823LG-G Microchip

HV823 Supertex inc. High Voltage EL Lamp Driver IC Features General Description Processed with HVCMOS technology The Supertex HV823 is a high-voltage driver designed for driving EL lamps of up to 50nF. EL lamps greater than 50nF can be driven for 2.0 to 9.5V operating supply voltage applications not requiring high brightness. The input supply voltage DC to AC conversion range is from 2.0V to 9.5V. The device uses a single inductor and a 180V peak-to-peak typical output voltage minimum number of passive components. The nominal regulated output Large output load capability typically 50nF voltage that is applied to the EL lamp is 90V. The chip can be enabled Permits the use of high-resistance elastomeric by connecting the resistors on the RSW-Osc pin and the REL-Osc pin lamp components to the VDD pin, and disabled when connected to GND. Adjustable output lamp frequency to control lamp color, lamp life, and power consumption The HV823 has two internal oscillators, a switching MOSFET and a Adjustable converter frequency to eliminate high-voltage EL lamp driver. The frequency of the switching converter harmonics and optimize power consumption MOSFET is set by an external resistor connected between the RSW- Enable/disable function Osc pin and the VDD supply pin. The EL lamp driver frequency is set Low current draw under no load condition by an external resistor connected between the REL-Osc pin and the VDD pin. An external inductor is connected between the LX pin and the VDD pin. A 0.01F to 0.1F capacitor is connected between the CS pin Applications and the GND. The EL lamp is connected between the VA and VB pins. Handheld personal computers The switching MOSFET charges the external inductor and discharges Electronic personal organizers it into the C capacitor. The voltage at C will start to increase. Once the GPS units S S voltage at C reaches a nominal value of 90V, the switching MOSFET S Pagers is turned OFF to conserve power. The output pins VA and VB are con- Cellular phones figured as an H-bridge and are switched in opposite states to achieve Portable instrumentation 180V peak-to-peak across the EL lamp. For additional information, see Application Note ANH34. Block Diagram LX VDD CS RSW-Osc Switch Osc Enable * Q GND VA + C Q V Disable REF Output Osc Q VB REL-Osc Q * Enable is available in die form only. Doc. DSFP-HV823 Supertex inc. C082213 www.supertex.comHV823 Pin Configuration Ordering Information Part Number Package Packing VDD 1 8 REL-Osc HV823LG-G 8-Lead SOIC 2500/Reel RSW-Osc 2 7 VA -G denotes a lead (Pb)-free / RoHS compliant package CS VB 3 6 LX GND 4 5 Absolute Maximum Ratings 8-Lead SOIC Parameter Value (top view) Supply voltage, V -0.5 to +10V DD Output voltage, V -0.5 to +120V CS Product Marking Power dissipation 400mW Y = Last Digit of Year Sealed O O Storage temperature -65 C to +150 C YWW WW = Week Sealed O O Operating temperature -25 C to +85 C HV823 L = Lot Number LLLL Stresses beyond those listed under Absolute Maximum Ratings may cause = Green Packaging permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in Package may or may not include the following marks: Si or the operational sections of the specifications is not implied. Exposure to absolute 8-Lead SOIC maximum rating conditions for extended periods may affect device reliability. All voltages referenced to ground. Note: All voltages referenced to GND. Typical Thermal Resistance Package ja O 8-Lead SOIC 101 C/W Recommended Operating Conditions Sym Parameter Min Typ Max Unit Conditions V Supply voltage 2.0 - 9.5 V --- DD O T Operating temperature -25 - +85 C --- A (V = 3.0V, R = 750K, R = 2.0M, T = 25C unless otherwise specified) DC Electrical Characteristics IN SW EL A Sym Parameter Min Typ Max Unit Conditions R On resistance of switching transistor - 2.0 6.0 I = 100mA DS(ON) V Output voltage V regulation 80 90 100 V V = 2.0V to 9.5V CS CS IN V - V Output peak-to-peak voltage 160 180 200 V V = 2.0V to 9.5V A B IN I Quiescent V supply current, disabled - 30 100 nA R = Low DDQ DD SW-OSC - 150 200 A V = 3.0V. See Fig.1 IN I V supply current - - 300 A V = 5.0V. See Fig.2 DD DD IN - - 500 A V = 9.0V. See Fig.3 IN I Input current including inductor current - 25 33 mA V = 3.0V. See Fig.1 IN IN V Output voltage on V 60 70 85 V V = 3.0V. See Fig.1 CS CS IN f V - V output drive frequency 330 380 450 Hz V = 3.0V. See Fig.1 EL A B IN f Inductor switching frequency 50 60 70 KHz V = 3.0V. See Fig.1 SW IN D Switching transistor duty cycle - 88 - % --- Doc. DSFP-HV823 Supertex inc. C082213 www.supertex.com 2