The documentation and process conversion INCH-POUND measures necessary to comply with this revision shall be completed by 14 January 2014. MIL-PRF-19500/429M 14 October 2013 SUPERSEDING MIL-PRF-19500/429L 7 August 2008 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST RECOVERY, TYPES 1N5615, 1N5617, 1N5619, 1N5621, 1N5623, 1N5615US, 1N5617US, 1N5619US, 1N5621US, 1N5623US, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC This specification is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for silicon, fast recovery power rectifier diodes that are hermetic glass encapsulated. Four levels of product assurance are provided for each encapsulated device as specified in MIL-PRF-19500. Two levels of product assurance are provided each unencapsulated device type. 1.2 Physical dimensions. See figure 1 (axial lead), figure 2 surface mount (D-5A), figures 3, and 4 (JANHC and JANKC). 1.3 Maximum ratings. Unless otherwise specified T = +25C. C Col. 1 Col. 2 Col. 3 Col. 4 Col. 5 Col. 6 Col. 7 Col. 8 Col. 9 Col. 10 Types V I t T I Barometric R R R RWM O rr STG FSM JL JEC JX (1) (2) (3) T pressure J T = T = T = +100 C (reduced) L = .375 (6) A A A +55C +100C I = 750 mA (4) inch O (9.53 mm) dc (5) V = rated RWM t = 8.3 ms P V(pk) A dc mA dc ns A(pk) mmHg C C/W C/W C/W 1N5615 200 1 750 150 25 N/A -65 38 13 115 1N5617 400 1 750 150 25 8 38 13 115 1N5619 600 1 750 250 to 25 8 38 13 115 1N5621 800 1 750 300 25 33 38 13 115 1N5623 1,000 1 750 500 25 33 +175 38 13 115 See notes on next page. * Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime, ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductor dla.mil. Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at MIL-PRF-19500/429M 1.3 Maximum ratings - Continued. (1) Electrical characteristics for US suffix are identical to the corresponding non-suffix device. (2) Derate linearly from 1.0 A at T = +55C to 0.75 A at +100C. Derate linearly from 0.75 A to 0 A between A +100C and +175C. See figure 5 for derating curves. (3) For the 1 amp rating at 55C ambient or 0.75 amp rating at 100C ambient, these I ratings are for thermal O mounting methods (PC boards or other) where thermal resistance from mounting point to ambient is still sufficiently controlled where T in 1.3 is not exceeded. This equates to R 115C/W as shown. J(MAX) JX Also see application notes in 6.5.1. (4) Barometric pressure: 1N5617 and 1N5619 is 8 mm Hg (100,000 feet) 1N5621 and 1N5623 is 33 mm Hg (70,000 feet). (5) See figure 6. (6) See figure 7. 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the solicitation or contract. DEPARTMENT OF DEFENSE SPECIFICATIONS MIL-PRF-19500 - Semiconductor Devices, General Specification for. DEPARTMENT OF DEFENSE STANDARDS MIL-STD-750 - Test Methods for Semiconductor Devices. * (Copies of these documents are available online at