JANTX1N5802US Microchip

1N5802US, 1N5804US, 1N5806US and URS Qualified Levels: VOIDLESS HERMETICALLY SEALED ULTRAFAST JAN, JANTX, Available on RECOVERY GLASS RECTIFIERS JANTXV and JANS commercial versions Qualified per MIL-PRF-19500/477 DESCRIPTION This Ultrafast Recovery rectifier diode series is military qualified and is ideal for high-reliability applications where a failure cannot be tolerated. The industry-recognized 2.5 amp rated rectifiers with working peak reverse voltages from 50 to 150 volts are hermetically sealed with voidless glass construction using an internal Category 1 metallurgical bond. These devices are available in both surface mount MELF and leaded package configurations. Microsemi also offers numerous other rectifier products to meet higher and lower current ratings with various recovery time requirements including standard, fast and ultrafast device types in both through-hole and surface mount A or D-5A packages. Important: For the latest information, visit our website 1N5802US, 1N5804US, 1N5806US and URS MECHANICAL and PACKAGING CASE: Hermetically sealed voidless hard glass with tungsten slugs. TERMINALS: Tin/lead (Sn/Pb) or RoHS compliant matte/tin (commercial grade only) over nickel plate over copper. MARKING: Body painted and part number. POLARITY: Cathode indicated by band. TAPE & REEL option: Standard per EIA-481-B. Consult factory for quantities. WEIGHT: 193 milligrams. See Package Dimensions on last page. PART NOMENCLATURE JAN 1N5802 US (e3) Reliability Level RoHS Compliance JAN = JAN Level e3 = RoHS compliant (available JANTX = JANTX Level on commercial grade only) JANTXV = JANTXV Level Blank = non-RoHS compliant JANS = JANS Level Blank = Commercial Surface Mount package type US = 2 Square end caps JEDEC type number URS = 1 Square + 1 Round end (See Electrical Characteristics cap table) SYMBOLS & DEFINITIONS Symbol Definition V Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current. BR Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating temperature V RWM range. Average Rectified Output Current: Output current averaged over a full cycle with a 50 Hz or 60 Hz sine-wave input and I O a 180 degree conduction angle. V Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current. F I Maximum Leakage Current: The maximum leakage current that will flow at the specified voltage and temperature. R C Capacitance: The capacitance in pF at a frequency of 1 MHz and specified voltage. Reverse Recovery Time: The time interval between the instant the current passes through zero when changing from t rr the forward direction to the reverse direction and a specified recovery decay point after a peak reverse current occurs. ELECTRICAL CHARACTERISTICS REVERSE SURGE REVERSE BREAKDOWN MAXIMUM FORWARD THERMAL CURRENT CURRENT RECOVERY VOLTAGE VOLTAGE IMPEDANCE (MAX.) (MAX) TIME (MAX) (MIN.) 8.3 ms pulse t = 10 ms H V I t 100 A V RWM FSM rr Z FM JX V(BR) IR (Note 1) (Note 2) (Note 3) TYPE Volts A o o o Volts I = 1.0 A I = 2.5 A 25 C 125 C Amps ns C/W F F 1N5802US & URS 60 0.875 0.975 1 175 35 25 4.0 1N5804US & URS 110 0.875 0.975 1 175 35 25 4.0 1N5806US & URS 160 0.875 0.975 1 175 35 25 4.0 o NOTES: 1. T = 2.5 C I = 1.0 A and V for ten 8.3 ms surges at 1 minute intervals (I surge is also a maximum rating). A O RWM FSM 2. I = 0.5 A, I = 0.5 A, I = .05 A (t reverse recovery time is also a maximum rating). F RM R(REC) rr 3. For the complete thermal impedance curve over a broad range of heating times, see Figure 1. T4-LDS-0211-1, Rev. 1 (111900) 2011 Microsemi Corporation Page 2 of 5