1N6620 thru 1N6625 WWW.Microsemi .COM 1N6620 thru 1N6625 VOIDLESS-HERMETICALLY SEALED ULTRA FAST RECOVERY GLASS SCOTTSDALE DIVISION RECTIFIERS DESCRIPTION APPEARANCE This Ultrafast Recovery rectifier diode series is military qualified to MIL-PRF- 19500/585 and is ideal for high-reliability applications where a failure cannot be tolerated. These industry-recognized 1.5 to 2.0 Amp rated rectifiers for working peak reverse voltages from 200 to 1000 volts are hermetically sealed with voidless- glass construction using an internal Category I metallurgical bond. These devices are also available in surface mount MELF package configurations by adding a US suffix (see separate data sheet for 1N6620US thru 1N6625US). Microsemi also offers numerous other rectifier products to meet higher and lower current ratings with various recovery time speed requirements including standard, fast and ultrafast device types in both through-hole and surface mount packages. Package A Axial IMPORTANT: For the most current data, consult MICROSEMIs website: 1N6620 thru 1N6625 WWW.Microsemi .COM 1N6620 thru 1N6625 VOIDLESS-HERMETICALLY SEALED ULTRA FAST RECOVERY GLASS SCOTTSDALE DIVISION RECTIFIERS o ELECTRICAL CHARACTERISTICS 25 C TYPE MINIMUM MAXIMUM WORKING MAXIMUM MAXIMUM MAXIMUM PEAK FORWARD NUMBER BREAK- FORWARD PEAK REVERSE REVERSE REVERSE RECOVERY RECOVERY DOWN VOLTAGE REVERSE RECOVERY RECOVERY CURRENT VOLTAGE CURRENT I R VOLTAGE VOLTAGE TIME (LOW TIME (HIGH V I I (rec) V Max F F V RM FRM RWM V CURRENT) CURRENT) R V RWM I = 2A, I = 0.5A I F F R I = 50A o o R t t rr rr 100A/ s T =25C T =150 C t =12ns A A fr Note 1 Note 2 Note 2 V V A V A V ns ns A V A A 1N6620 220 1.40V 1.2A 1.60V 2.0A 200 0.5 150 30 45 3.5 12 1N6621 440 1.40V 1.2A 1.60V 2.0A 400 0.5 150 30 45 3.5 12 1N6622 660 1.40V 1.2A 1.60V 2.0A 600 0.5 150 30 45 3.5 12 1N6623 880 1.55V 1.0A 1.80V 1.5A 800 0.5 150 50 60 4.2 18 1N6624 990 1.55V 1.0A 1.80V 1.5A 900 0.5 150 50 60 4.2 18 1N6625 1100 1.75V 1.0A 1.95V 1.5A 1000 1.0 200 60 80 5.0 30 NOTE 1: Low Current Reverse Recovery Time Test Conditions: I =0.5A, I =1.0A, I = 0.25A per MIL-STD-750, F RM R(REC) Method 4031, Condition B. NOTE 2: High Current Reverse Recovery Time Test Conditions: I = 2 A, di/dt=100 A/s MIL-STD-750, Method 4031, F Condition D. SYMBOLS & DEFINITIONS Symbol Definition V Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current. BR Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating V RWM temperature range. V Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current. F Maximum Reverse Current: The maximum reverse (leakage) current that will flow at the specified voltage and I R temperature. Capacitance: The capacitance of the TVS as defined 0 volts at a frequency of 1 MHz and stated in C picofarads. Reverse Recovery Time: The time interval between the instant the current passes through zero when t changing from the forward direction to the reverse direction and a specified recovery decay point after a peak rr reverse current is reached. CHARTS AND GRAPHS FIGURE 1 FIGURE 2 Typical Forward Current Typical Forward Current vs vs Forward Voltage Forward Voltage Copyright 2009 Microsemi Page 2 10-06-2009 REV C SA7-55.pdf Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503