X-On Electronics has gained recognition as a prominent supplier of JANTX1N6621US Rectifiers across the USA, India, Europe, Australia, and various other global locations. JANTX1N6621US Rectifiers are a product manufactured by Microchip. We provide cost-effective solutions for Rectifiers, ensuring timely deliveries around the world.

JANTX1N6621US Microchip

JANTX1N6621US electronic component of Microchip
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Part No.JANTX1N6621US
Manufacturer: Microchip
Category: Rectifiers
Description: Rectifiers Ultra Fast Rectifier (less than 100ns)
Datasheet: JANTX1N6621US Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
55: USD 13.3849 ea
Line Total: USD 736.17 
Availability - 0
MOQ: 55  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 55
Multiples : 1
55 : USD 13.3849
550 : USD 12.5925

0
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 1
Multiples : 1
1 : USD 18.4421
4 : USD 16.5342
20 : USD 15.8983
40 : USD 15.2624
125 : USD 15.2624

   
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We are delighted to provide the JANTX1N6621US from our Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the JANTX1N6621US and other electronic components in the Rectifiers category and beyond.

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WWW.Microsemi .COM 1N6620US 1N6625US 1N6620US thru 1N6625US VOIDLESS-HERMETICALLYSEALED SURFACE MOUNT ULTRA FAST SCOTTSDALE DIVISION RECOVERY GLASS RECTIFIERS DESCRIPTION APPEARANCE This Ultrafast Recovery rectifier diode series is military qualified to MIL-PRF- 19500/585 and is ideal for high-reliability applications where a failure cannot be tolerated. These industry-recognized 1.5 to 2.0 Amp rated rectifiers for working peak reverse voltages from 200 to 1000 volts are hermetically sealed with voidless- glass construction using an internal Category I metallurgical bond. These devices are also available in axial-leaded packages for thru-hole mounting (see separate data sheet for 1N6620 thru 1N6625). Microsemi also offers numerous other rectifier products to meet higher and lower current ratings with various recovery time speed Package A requirements including standard, fast and ultrafast device types in both through-hole or D-5A and surface mount packages. IMPORTANT: For the most current data, consult MICROSEMIs website: WWW.Microsemi .COM 1N6620US 1N6625US 1N6620US thru 1N6625US VOIDLESS-HERMETICALLYSEALED SURFACE MOUNT ULTRA FAST SCOTTSDALE DIVISION RECOVERY GLASS RECTIFIERS o ELECTRICAL CHARACTERISTICS @ 25 C TYPE MINIMUM MAXIMUM WORKING MAXIMUM MAXIMUM MAXIMUM PEAK FORWARD NUMBER BREAK- FORWARD PEAK REVERSE REVERSE REVERSE RECOVERY RECOVERY DOWN VOLTAGE REVERSE RECOVERY RECOVERY CURRENT VOLTAGE CURRENT I @ R VOLTAGE VOLTAGE TIME (LOW TIME (HIGH V @ I I (rec) V Max F F V RM FRM RWM V CURRENT) CURRENT) R V RWM I = 2A, I = 0.5A I F F R I = 50A o o R t t rr rr 100A/ s T =25C T =150 C t =12ns A A fr Note 1 Note 2 Note 2 V V @ A V @ A V ns ns A V A A 1N6620 220 1.40V @ 1.2A 1.60V @ 2.0A 200 0.5 150 30 45 3.5 12 1N6621 440 1.40V @ 1.2A 1.60V @ 2.0A 400 0.5 150 30 45 3.5 12 1N6622 660 1.40V @ 1.2A 1.60V @ 2.0A 600 0.5 150 30 45 3.5 12 1N6623 880 1.55V @ 1.0A 1.80V @ 1.5A 800 0.5 150 50 60 4.2 18 1N6624 990 1.55V @ 1.0A 1.80V @ 1.5A 900 0.5 150 50 60 4.2 18 1N6625 1100 1.75V @ 1.0A 1.95V @ 1.5A 1000 1.0 200 60 80 5.0 30 NOTE 1: Low Current Reverse Recovery Time Test Conditions: I =0.5A, I =1.0A, I = 0.25A per MIL-STD-750, F RM R(REC) Method 4031, Condition B. NOTE 2: High Current Reverse Recovery Time Test Conditions: I = 2 A, di/dt=100 A/s MIL-STD-750, Method 4031, F Condition D. SYMBOLS & DEFINITIONS Symbol Definition V Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current. BR Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating V RWM temperature range. V Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current. F Maximum Reverse Current: The maximum reverse (leakage) current that will flow at the specified voltage and I R temperature. Capacitance: The capacitance of the TVS as defined @ 0 volts at a frequency of 1 MHz and stated in C picofarads. Reverse Recovery Time: The time interval between the instant the current passes through zero when t changing from the forward direction to the reverse direction and a specified recovery decay point after a peak rr reverse current is reached. CHARTS AND GRAPHS FIGURE 1 FIGURE 2 Typical Forward Current Typical Forward Current vs vs Forward Voltage Forward Voltage Copyright 2009 Microsemi Page 2 10-06-2009 REV E; SD52A.pdf Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

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8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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