WWW.Microsemi .COM
1N6620US 1N6625US
1N6620US thru 1N6625US
VOIDLESS-HERMETICALLYSEALED
SURFACE MOUNT ULTRA FAST
SCOTTSDALE DIVISION
RECOVERY GLASS RECTIFIERS
DESCRIPTION APPEARANCE
This Ultrafast Recovery rectifier diode series is military qualified to MIL-PRF-
19500/585 and is ideal for high-reliability applications where a failure cannot be
tolerated. These industry-recognized 1.5 to 2.0 Amp rated rectifiers for working
peak reverse voltages from 200 to 1000 volts are hermetically sealed with voidless-
glass construction using an internal Category I metallurgical bond. These devices
are also available in axial-leaded packages for thru-hole mounting (see separate
data sheet for 1N6620 thru 1N6625). Microsemi also offers numerous other rectifier
products to meet higher and lower current ratings with various recovery time speed
Package A
requirements including standard, fast and ultrafast device types in both through-hole
or D-5A
and surface mount packages.
IMPORTANT: For the most current data, consult MICROSEMIs website: WWW.Microsemi .COM
1N6620US 1N6625US
1N6620US thru 1N6625US
VOIDLESS-HERMETICALLYSEALED
SURFACE MOUNT ULTRA FAST
SCOTTSDALE DIVISION
RECOVERY GLASS RECTIFIERS
o
ELECTRICAL CHARACTERISTICS @ 25 C
TYPE
MINIMUM MAXIMUM WORKING MAXIMUM MAXIMUM MAXIMUM PEAK FORWARD
NUMBER
BREAK- FORWARD PEAK REVERSE REVERSE REVERSE RECOVERY RECOVERY
DOWN VOLTAGE REVERSE RECOVERY RECOVERY CURRENT VOLTAGE
CURRENT I @
R
VOLTAGE VOLTAGE TIME (LOW TIME (HIGH
V @ I I (rec) V Max
F F V RM FRM
RWM
V CURRENT) CURRENT)
R V
RWM I = 2A, I = 0.5A
I F F
R
I = 50A o o
R t t
rr rr 100A/ s
T =25C T =150 C t =12ns
A A fr
Note 1 Note 2
Note 2
V V @ A V @ A V ns ns A V
A A
1N6620 220 1.40V @ 1.2A 1.60V @ 2.0A 200 0.5 150 30 45 3.5 12
1N6621 440 1.40V @ 1.2A 1.60V @ 2.0A 400 0.5 150 30 45 3.5 12
1N6622 660 1.40V @ 1.2A 1.60V @ 2.0A 600 0.5 150 30 45 3.5 12
1N6623 880 1.55V @ 1.0A 1.80V @ 1.5A 800 0.5 150 50 60 4.2 18
1N6624 990 1.55V @ 1.0A 1.80V @ 1.5A 900 0.5 150 50 60 4.2 18
1N6625 1100 1.75V @ 1.0A 1.95V @ 1.5A 1000 1.0 200 60 80 5.0 30
NOTE 1: Low Current Reverse Recovery Time Test Conditions: I =0.5A, I =1.0A, I = 0.25A per MIL-STD-750,
F RM R(REC)
Method 4031, Condition B.
NOTE 2: High Current Reverse Recovery Time Test Conditions: I = 2 A, di/dt=100 A/s MIL-STD-750, Method 4031,
F
Condition D.
SYMBOLS & DEFINITIONS
Symbol Definition
V Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current.
BR
Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating
V
RWM
temperature range.
V Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current.
F
Maximum Reverse Current: The maximum reverse (leakage) current that will flow at the specified voltage and
I
R
temperature.
Capacitance: The capacitance of the TVS as defined @ 0 volts at a frequency of 1 MHz and stated in
C
picofarads.
Reverse Recovery Time: The time interval between the instant the current passes through zero when
t changing from the forward direction to the reverse direction and a specified recovery decay point after a peak
rr
reverse current is reached.
CHARTS AND GRAPHS
FIGURE 1 FIGURE 2
Typical Forward Current Typical Forward Current
vs vs
Forward Voltage Forward Voltage
Copyright 2009
Microsemi
Page 2
10-06-2009 REV E; SD52A.pdf
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503