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LX5560
LX5560
LX5560
TM InGaAs E-Mode pHEMT Low Noise Amplifier
PRODUCTION DATA SHEET
DESCRIPTION KEY FEATURES
0.5m InGaAs E-mode pHEMT
The LX5560 is a low noise amplifier The LNA is implemented with bias
4.9 - 6GHz Operation
(LNA) for WLAN applications in the circuit and input matching circuit on
Single 3.3V Supply
4.9-6.0 GHz frequency range. This chip, resulting in simple external
Gain ~ 12dB
LNA is manufactured with an InGaAs circuit. In addition, the on-chip bias
Noise Figure ~ 1.7dB
Enhancement mode pseudomorphic circuit provides stable performance of
Input IP3 ~ +6dBm
HEMT (E-pHEMT) process. gain, NF and current for voltage
Input P1dB ~ +2dBm
It operates with a single positive variation compared to a general
On-Chip Bias Circuit
voltage supply of 3.3V, with noise resistor-network bias circuit.
On-Chip Input Match
figure(NF) of 1.7dB while maintaining The LX5560 is available in a 12-pin
Simple Output Match
2x2mm MLPQ 12 Pin
input third order intercept point(IIP3) 2mmx2mm micro-lead package(MLPQ-
Low Profile 0.5mm
of up to +6dBm. 12L).
APPLICATIONS
BLOCK DIAGRAM
Wireless LAN 802.11a
WiMax
VdVddd
BiBiaass
CiCircrcuuiitt
RFRF RFRF
IInpunputt OuOutptpuutt
InInppuutt
MatMatcchh
IMPORTANT: For the most current data, consult MICROSEMIs website: WWW.Microsemi .COM
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PAACCKKAAGGEE DAATTAA
LX5560
TM InGaAs E-Mode pHEMT Low Noise Amplifier
PRODUCTION DATA SHEET
ABSOLUTE MAXIMUM RATINGS PACKAGE PIN OUT
DC Supply Voltage, RF Off............................................................................................4 V
Drain Current ............................................................................................................ 40 mA
Total Power Dissipation............................................................................................0.15 W
10 11 12
RF Input Power..................................................................................................... +10 dBm
Operation Ambient Temperature Range ..................................................... -40C to +85C
9 1
N/C N/C
Storage Temperature Range.........................................................................-65 C to 150C
2
8 RF IN
RF OUT
Package Peak Temp. for Solder Reflow (40 seconds maximum exposure) ... 260C (+0 -5)
GND
7 3
N/C N/C
Note: Exceeding these ratings could cause damage to the device. All voltages are with respect to
6 5 4
Ground. Currents are positive into, negative out of specified terminal.
LL PACKAGE
(Bottom View)
RoHS / Pb-free NiPdAu Lead Finish
FUNCTIONAL PIN DESCRIPTION
Name Pin # Description
RF Input for the low noise amplifier. This pin is DC-shorted to GND but AC-coupled to the
RF IN 2
transistor gate.
RF Output for the low noise amplifier. This pin is AC-coupled and does not require a DC-blocking
RF OUT 8
capacitor.
VDD 12 Supply Voltage.
Center The center metal base of the MLP package provides both DC and RF ground.
GND
Metal
1,3,4,5,6,7, Not Used. They may be treated either as open pins or connected to the ground.
N/C
9,10,11
Copyright 2006
Microsemi
Page 2
Rev. 1.0, 2006-12-20
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
N/C N/C
N/C
N/C
VDD
N/C