MMAD1103(e3) Switching Diode Array Available TM Steering Diode TVS Array DESCRIPTION These low capacitance diode arrays are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 14-Pin SOIC package for use as steering diodes protecting up to eight I/O ports from ESD, EFT, or surge by directing them either to the positive side of the power supply line or to ground (see Figure 1). An external TVS diode may be added between the positive supply line and ground to prevent overvoltage on the supply rail. They 14-Pin Package may also be used in fast switching core-driver applications. This includes computers and peripheral equipment such as magnetic cores, thin-film memories, plated-wire memories, etc., as well as decoding or encoding applications. These arrays offer many advantages of integrated circuits such as high-density packaging and improved reliability. This is a result of fewer pick and place operations, smaller footprint, smaller weight, and elimination of various discrete packages that may not be as user friendly in PC board mounting. They are available with either tin-lead plating terminations or as RoHS compliant with annealed matte-tin finish. Important: For the latest information, visit our website MMAD1103(e3) MAXIMUM RATINGS Parameters/Test Conditions Symbol Value Unit Junction and Storage Temperature T and T -55 to +150 C/W J STG Peak Working Reverse Voltage V 75 V RWM Repetitive Peak Forward Current (one diode) I 400 mA FRM Forward Surge Current 8.3 ms I 2 A FSM 12 8/20 s Rated Average Power Dissipation (total package) P 1500 mW M(AV) Solder Temperature 10 s 260 C MECHANICAL and PACKAGING CASE: Void-free transfer molded thermosetting epoxy body meeting UL94V-0 flammability classification. TERMINALS: Tin-lead or RoHS compliant annealed matte-tin plating solderable per MIL-STD-750 method 2026. MARKING: MSC logo, MMAD1103 or MMAD1103e3 and date code. Pin 1 is to the left of the dot or indent on top of package. DELIVERY option: Tape and reel or carrier tube. Consult factory for quantities. WEIGHT: Approximately 0.127 grams Package Dimensions on last page. See PART NOMENCLATURE MMAD 1103 (e3) Surface Mount Package RoHS Compliance e3 = RoHS compliant Series Number Blank = non-RoHS compliant SYMBOLS & DEFINITIONS Symbol Definition C Total Capacitance: The total small signal capacitance between the diode terminals of a complete device. T I Maximum Leakage Current: The maximum leakage current that will flow at the specified voltage and temperature. R V Breakdown Voltage: The voltage across the device at a specified current I in the breakdown region. (BR) (BR) V Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current. F V Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating temperature range. RWM ELECTRICAL CHARACTERISTICS 25 C unless otherwise stated BREAKDOWN LEAKAGE LEAKAGE TOTAL REVERSE FORWARD FORWARD CURRENT CURRENT VOLTAGE CAPACITANCE RECOVERY VOLTAGE VOLTAGE V I I C TIME V V (BR) R R T F F PART I =100 A 0 V t I = 10 mA I = 100 mA BR T = 25 C T = 150 C rr F F A A NUMBER V pF ns V V A A MIN MAX V MAX V TYP (Note 1) MAX MAX MAX R R MMAD1103 90 0.200 20 300 20 1.5 5.0 1.00 1.20 MMAD1103e3 NOTE 1: Individual diode capacitance is less than 1.5 pF but will read higher between pins with the connected parallel diode array shown. RF01063, Rev B (2/17/14) 2013 Microsemi Corporation Page 2 of 3 One Enterprise, Aliso Viejo, CA 92656 Ph: 949-380-6100 sales.support microsemi.com