MSC015SMA070B4 Microchip

MSC015SMA070B4 Silicon Carbide N-Channel Power MOSFET 1 Product Overview The silicon carbide (SiC) power MOSFET product line from Microsemi increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications. The MSC015SMA070B4 device is a 700 V, 15 m SiC MOSFET in a TO-247 4-lead package with a source sense. 1.1 Features The following are key features of the MSC015SMA070B4 device: Low capacitances and low gate charge Fast switching speed due to low internal gate resistance (ESR) Stable operation at high junction temperature, TJ(max) = 175 C Fast and reliable body diode Superior avalanche ruggedness RoHS compliant 1.2 Benefits The following are benefits of the MSC015SMA070B4 device: High efficiency to enable lighter, more compact system Simple to drive and easy to parallel Improved thermal capabilities and lower switching losses Eliminates the need for external freewheeling diode Lower system cost of ownership 1.3 Applications The MSC015SMA070B4 device is designed for the following applications: PV inverter, converter, and industrial motor drives Smart grid transmission and distribution Induction heating and welding H/EV powertrain and EV charger Power supply and distribution 050-7764 MSC015SMA070B4 Datasheet Revision A 12 Device Specifications This section shows the specifications of the MSC015SMA070B4 device. 2.1 Absolute Maximum Ratings The following table shows the absolute maximum ratings of the MSC015SMA070B4 device. Table 1 Absolute Maximum Ratings Symbol Characteristic Ratings Unit VDSS Drain source voltage 700 V ID Continuous drain current at TC = 25 C 140 A Continuous drain current at T C = 100 C 99 1 IDM Pulsed drain current 350 VGS Gate-source voltage 23 to 10 V PD Total power dissipation at TC = 25 C 455 W Linear derating factor 3.03 W/C Note: 1. Repetitive rating: pulse width and case temperature limited by maximum junction temperature. The following table shows the thermal and mechanical characteristics of the MSC015SMA070B4 device. Table 2 Thermal and Mechanical Characteristics Symbol Characteristic Min Typ Max Unit RJC Junction-to-case thermal resistance 0.22 0.33 C/W TJ Operating junction temperature 55 175 C TSTG Storage temperature 55 150 TL Soldering temperature for 10 seconds (1.6 mm from case) 260 Mounting torque, 6-32 or M3 screw 10 lbf-in 1.1 N-m Wt Package weight 0.22 oz 6.2 g 050-7764 MSC015SMA070B4 Datasheet Revision A 2