MSC017SMA120B Microchip

MSC017SMA120B Silicon Carbide N-Channel Power MOSFET Product Over view The silicon carbide (SiC) power MOSFET product line from Microsemi increases the performance over silicon MOSFET and silicon IGBT solutions while lowering the total cost of ownership for high-voltage applications. The MSC017SMA120B device is a 1200 V, 17 m SiC MOSFET in a TO-247 package. Features The following are key features of the MSC017SMA120B device: Low capacitances and low gate charge Fast switching speed due to low internal gate resistance (ESR) Stable operation at high junction temperature, T = 175 C J(max) Fast and reliable body diode Superior avalanche rug gedness RoHS compliant Benefits The following are benefits of the MSC017SMA120B device: High efficiency to enable lighter, more compact system Simple to drive and easy to parallel Improved thermal capabilities and lower switching losses Eliminates the need for ex ternal freewheeling diode Lower system cost of ownership Applications The MSC017SMA120B device is designed for the following applications: PV inverter, converter, and industrial motor drives Smart grid transmission and distribution Induction heating and welding H/EV powertrain and EV charger Power supply and distribution 050-7778 MSC017SMA120B Datasheet Revision B 1Device Specific ations Device Specific ations This section shows the specific ations of the MSC017SMA120B device. Absolute Maximum Ratings The following table shows the absolute maximum ratings of the MSC017SMA120B device. Table 1 Absolute Maximum Ratings Symbol Parameter Ratings Unit V Drain source voltage 1200 V DSS I Continuous drain current at T = 25 C 113 A D C Continuous drain current at T = 100 C 80 C 1 I Pulsed drain current 280 DM V Gate-source voltage 23 to 10 V GS P Total power dissipation at T = 25 C 455 W D C Linear derating factor 3.33 W/C Note: Repetitive rating: pulse width and case temperature limited by maximum junction temperature. 1. The following table shows the thermal and mechanical characteristics of the MSC017SMA120B device. Table 2 Thermal and Mechanical Characteristics Symbol Characteristic Min Typ Max Unit R Junction-to-case thermal resistance 0.22 0.33 C/W JC T Operating junction temperature 55 175 C J T Storage temperature 55 150 STG T Soldering temperature for 10 seconds (1.6 mm from case) 300 L Mounting torque, 6-32 or M3 screw 10 lbf-in 1.1 N-m Wt Package weight 0.22 oz 6.2 g 050-7778 MSC017SMA120B Datasheet Revision B 2