X-On Electronics has gained recognition as a prominent supplier of MSC050SDA070S Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. MSC050SDA070S Schottky Diodes & Rectifiers are a product manufactured by Microchip. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

MSC050SDA070S Microchip

MSC050SDA070S electronic component of Microchip
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See Product Specifications
Part No.MSC050SDA070S
Manufacturer: Microchip
Category: Schottky Diodes & Rectifiers
Description: Diode SiC Schottky 700V 88A 2-Pin TO-268
Datasheet: MSC050SDA070S Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 12.581 ea
Line Total: USD 12.58 
Availability - 87
Ship by Thu. 21 Nov to Mon. 25 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
87
Ship by Thu. 21 Nov to Mon. 25 Nov
MOQ : 1
Multiples : 1
1 : USD 12.581
30 : USD 11.73
120 : USD 10.833

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Product Type
Factory Pack Quantity :
Subcategory
Vr - Reverse Voltage
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We are delighted to provide the MSC050SDA070S from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MSC050SDA070S and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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MSC050SDA070S Zero Recovery Silicon Carbide Schottky Diode 1 Product Overview The silicon carbide (SiC) power Schottky barrier diode (SBD) product line from Microsemi increases your performance over silicon diode solutions while lowering your total cost of ownership for high-voltage applications. The MSC050SDA070S is a 700 V, 50 A SiC SBD. 1.1 Features The following are key features of the MSC050SDA070S device: No reverse recovery Low forward voltage Low leakage current Avalanche energy rated RoHS compliant 1.2 Benefits The following are benefits of the MSC050SDA070S device: High switching frequency Low switching losses Low noise (EMI) switching Higher reliability systems Increased system power density 1.3 Applications The MSC050SDA070S device is designed for the following applications: Power factor correction (PFC) Anti-parallel diode Switch-mode power supply Inverters/converters Motor controllers Freewheeling diode Switch-mode power supply Inverters/converters Snubber/clamp diode 053-4101 MSC050SDA070S Datasheet Revision A 12 Device Specifications This section shows the specifications of the MSC050SDA070S device. 2.1 Absolute Maximum Ratings The following table shows the absolute maximum ratings of the MSC050SDA070S device. All ratings at TC = 25 C unless otherwise specified. Table 1 Absolute Maximum Ratings Symbol Parameter Ratings Unit VR Maximum DC reverse voltage 700 V VRRM Maximum peak repetitive reverse voltage 700 VRWM Maximum working peak reverse voltage 700 IF Maximum DC forward current Tc = 25 C 88 A Tc = 135 C 39 Tc = 145 C 32 IFRM Repetitive peak forward surge current (tP = 8.3 ms, half sine wave) 128 IFSM Non-repetitive forward surge current (tP = 8.3 ms, half sine wave) 124 PTOT Power dissipation Tc = 25 C 283 W Tc = 110 C 123 TJ , TSTG Operating junction and storage temperature range 55 to 175 C TL Lead temperature for 10 seconds 300 EAS Single-pulse avalanche energy 100 mJ (starting TJ = 25 C, L = 0.08 mH, peak IL = 50 A) The following table shows the thermal and mechanical characteristics of the MSC050SDA70S device. Table 2 Thermal and Mechanical Characteristics Symbol Characteristic Min Typ Max Unit RJC Junction-to-case thermal resistance 0.37 0.53 C/W Wt Package weight 0.14 oz 4.0 g 053-4101 MSC050SDA070S Datasheet Revision A 2

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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Atmel Wireless (VA)
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VECTRON INTERNATIONAL
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