X-On Electronics has gained recognition as a prominent supplier of MSC050SDA120S Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. MSC050SDA120S Schottky Diodes & Rectifiers are a product manufactured by Microchip. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

MSC050SDA120S Microchip

MSC050SDA120S electronic component of Microchip
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Part No.MSC050SDA120S
Manufacturer: Microchip
Category: Schottky Diodes & Rectifiers
Description: Zero Recovery Silicon Carbide Schottky Diode 1200V 109A 3-Pin TO-268
Datasheet: MSC050SDA120S Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 17.765 ea
Line Total: USD 17.76 
Availability - 42
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1

 MSC050SDA120S More Buying Options & Price Grid(s)

Availability Price Quantity
42
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 17.765
30 : USD 16.566
510 : USD 15.29
5010 : USD 14.707

Specifications

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Product Type
Factory Pack Quantity :
Subcategory
Vr - Reverse Voltage
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the MSC050SDA120S from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MSC050SDA120S and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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Additional Infomation About Product

MSC050SDA120S Zero Recovery Silicon Carbide Schottky Diode 1 Product Overview 1.1 Features The following are key features of the MSC050SDA120S device: Low forward voltage Low leakage current No reverse recovery current/no forward recovery Avalanche energy rated RoHS compliant 1.2 Benefits The following are benefits of the MSC050SDA120S device: High switching frequency Low switching losses Low noise (EMI) switching Higher reliability systems Increased system power density 1.3 Applications The MSC050SDA120S device is designed for the following applications: Power factor correction (PFC) Anti-parallel diode Switch-mode power supply Inverters/converters Motor controllers Freewheeling diode Switch-mode power supply Inverters/converters Snubber/clamp diode 053-4091 MSC050SDA120S Datasheet Revision A 12 Device Specifications This section details the specifications for the MSC050SDA120S device. 2.1 Absolute Maximum Ratings The following table shows the absolute maximum ratings for the MSC050SDA120S device. All ratings at TC = 25 C unless otherwise specified. Table 1 Absolute Maximum Ratings Symbol Parameter Ratings Unit VR Maximum DC reverse voltage 1200 V VRRM Maximum peak repetitive reverse voltage VRWM Maximum working peak reverse voltage IF Maximum DC forward current TC = 25 C 109 A TC = 135 C 49 TC = 145 C 41 IFRM Repetitive peak forward surge current (TC = 25 C, tp = 8.3 154 ms, half sine wave) IFSM Non-repetitive forward surge current (TC = 25 C, tp = 8.3 290 ms, half sine wave) Ptot Power dissipation TC = 25 C 429 W TC = 110 C 186 TJ , TSTG Operating junction and storage temperature range 55 to 175 C TL Lead temperature for 10 seconds 300 EAS Single-pulse avalanche energy (starting TJ = 25 C, L = 0.08 100 mJ mH, peak IL = 50 A) The following table shows the thermal and mechanical characteristics of the MSC050SDA120S Device. Table 2 Thermal and Mechanical Characteristics Symbol Characteristic Min Typ Max Unit RJC Junction-to-case thermal resistance 0.24 0.35 C/W Wt Package weight 0.14 oz 3.9 g 053-4091 MSC050SDA120S Datasheet Revision A 2

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

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Atmel
Atmel Wireless (VA)
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M9S
MCP
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MICREL SEMICONDUCTOR
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MICROSEMI
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Microsemi Commercial Components Group
MICROSEMI COMMUNICATIONS INC.
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Microsemi Corporation
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MICROSEMI/LAWRENCE
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