MSC030SDA120K Microchip

MSC030SDA120K Zero Recovery Silicon Carbide Schottky Diode 1 Product Overview The silicon carbide (SiC) power Schottky barrier diodes (SBD) product line from Microsemi increases your performance over silicon diode solutions while lowering your total cost of ownership for high- voltage applications. The MSC030SDA120K is a 1200 V, 30 A SiC SBD in a two-lead TO-220 package shown below. 1.1 Features The following are key features of the MSC030SDA120K device: Zero recovery characteristics Low forward voltage Low leakage current Avalanche-energy rated RoHS compliant 1.2 Benefits The following are benefits of the MSC030SDA120K device: High switching frequency Low switching losses Low noise (EMI) switching Higher reliability systems Increased system power density 1.3 Applications The MSC030SDA120K device is designed for the following applications: Power factor correction (PFC) Anti-parallel diode Switch-mode power supply Inverters/converters Motor controllers Freewheeling diode Switch-mode power supply Inverters/converters Snubber/clamp diode 053-4100 MSC030SDA120K Datasheet Revision A 12 Device Specifications This section shows the specifications of the MSC030SDA120K device. 2.1 Absolute Maximum Ratings The following table shows the absolute maximum ratings of the MSC030SDA120K device. All ratings are taken at TC = 25 C unless otherwise specified. Table 1 Absolute Maximum Ratings Symbol Parameter Ratings Unit VR Maximum DC reverse voltage 1200 V VRRM Maximum peak repetitive reverse voltage VRWM Maximum working peak reverse voltage IF Maximum DC forward current TC = 25 C 70 A TC = 135 C 32 TC = 145 C 27 IFRM Repetitive peak forward surge current (tp = 8.3 ms, half sine wave) 92 IFSM Non-repetitive forward surge current (tp = 8.3 ms, half sine wave) 165 PTOT Power dissipation TC = 25 C 300 W TC = 110 C 130 TJ , TSTG Operating junction and storage temperature range 55 to 175 C TL Lead temperature for 10 seconds 300 EAS Single pulse avalanche energy (starting TJ = 25 C, L = 0.22 mH, 100 mJ peak IL = 30 A) The following table shows the thermal and mechanical characteristics of the MSC030SDA120K device. Table 2 Thermal and Mechanical Characteristics Symbol Characteristic Min Typ Max Unit RJC Junction-to-case thermal resistance 0.35 0.50 C/W Wt Package weight 0.07 oz 1.9 g Mounting torque, 6-32 or M3 screw 10 lbf-in 1.1 N-m 053-4100 MSC030SDA120K Datasheet Revision A 2