MSDT200 Three Phase Bridge + Thyristor VRRM / VDRM 800 to 1600V IFAV / ITAV 200Amp Features Blocking voltage:800 to 1600V Three Phase Bridge and a Thyristor Circuit Low Forward Voltage - G R2 Applications Inverter for AC or DC motor control Current stablilzed power supply Switching power supply R S T UL E243882 approved Module Type TYPE VRRM / VDRM VRSM MSDT200-08 800V 900V MSDT200-12 1200V 1300V MSDT200-16 1600V 1700V Diode Maximum Ratings Symbol Item Conditions Values Units ID Output Current(D.C.) Tc=96 Three phase full wave 200 A IFSM Surge forward current t=10mS Tvj =45 1900 A 2 2 i t Circuit Fusing Consideration 18050 A s Visol Isolation Breakdown Voltage(R.M.S) a.c.50HZ r.m.s. 1min 3000 V Tvj Operating Junction Temperature -40 to +150 Tstg Storage Temperature -40 to +125 Mt Mounting Torque To terminals(M4) 215% Nm Mt To terminals(M6) 515% Nm Ms To heatsink(M6) 515% Nm Weight Module Approximately 320 g Thermal Characteristics Symbol Item Conditions Values Units Thermal Impedance, max. Junction to Case(TOTAL) 0.12 /W Rth(j-c) Rth(c-s) Thermal Impedance, max. Case to Heat sink 0.06 /W Electrical Characteristics Symbol Item Conditions Values Units VFM Forward Voltage Drop, max. T=25 IF =200A 1.45 V Tvj =25 VRD=VRRM Repetitive Peak Reverse Current, 2 mA IRRM max. 10 mA Tvj =150 VRD=VRRM Document Number: MSDT200 www.smsemi.com Sep.06,2013 1 + MSDT200 Thyristor Maximum Ratings Symbol Item Conditions Values Units Tc=93, Single Phase half wave I Average On-State Current 200 A TAV o 180 conduction TVJ=45 t=10ms (50Hz), sine I Surge On-State Current 1900 A TSM VR=0 2 2 i t Circuit Fusing Consideration 18050 A s Visol Isolation Breakdown Voltage(R.M.S) a.c.50HZ r.m.s. 1 min 3000 V Tvj Operating Junction Temperature -40 to +125 Tstg Storage Temperature -40 to +125 Mt Mounting Torque To terminals(M4) 215% Nm Mt To terminals(M6) 515% Ms To heatsink(M6) 515% Nm Critical Rate of Rise of On-State T =T , V =1/2V ,I =100mA VJ VJM D DRM G di/dt 200 A/s Current d /d =0.1A/ s iG t Critical Rate of Rise of Off-State T =T ,V =2/3V ,linear voltage J VJM D DRM dv/dt 500 V/s Voltage, min. rise Electrical and Thermal Characteristics Values Symbol Item Conditions Units Min. Typ. Max. V Peak On-State Voltage, max. 1.80 V T=25 I =600A TM T Repetitive Peak Reverse Current, T =T ,V =V ,V VJ VJM R RRM D I /I max. / Repetitive Peak Off-State 100 mA RRM DRM =V DRM Current, max. V Gate Trigger Voltage, max. 3 V T =25 , V =6V GT VJ D I Gate Trigger Current, max. T =25 , V =6V 150 mA GT VJ D Rth(j-c) Thermal Impedance, max. Junction to Case 0.14 /W Rth(c-s) Thermal Impedance, max. Case to Heatsink 0.06 /W Document Number: MSDT200 www.smsemi.com Sep.06,2013 2