SST25PF040CT-40V/NP Microchip

SST25PF040C 4 Mbit, 3.3V, SPI Serial Flash Temperature Range Features - Automotive AEC-Q100 Qualified Single Voltage Read and Write Operations - Industrial: -40C to +85C - 2.3-3.6V - Industrial Plus: -40C to +105C Serial Interface Architecture - Extended: -40C to +125C - SPI Compatible: Mode 0 and Mode 3 Packages Available High Speed Clock Frequency - 8-contact USON (2 mm x 3 mm) -40MHz - 8-lead SOIC (150 mils) Dual Input/Output Support - 8-contact WDFN (5mm x 6mm) - Fast-Read Dual-Output Instruction (3BH) All devices are RoHS compliant - Fast-Read Dual I/O Instruction (BBH) Superior Reliability Product Description - Endurance: 100,000 Cycles SST25PF040C is a member of the Serial Flash 25 - Greater than 20 years Data Retention Series family and feature a four-wire, SPI-compatible Ultra-Low Power Consumption: interface that allows for a low pin-count package which - Active Read Current: 5 mA (typical) occupies less board space and ultimately lowers total system costs. SPI serial flash memory is manufactured - Standby Current: 5 A (typical) with proprietary, high-performance CMOS SuperFlash - Power-down Mode Standby Current: 3 A technology. The split-gate cell design and thick-oxide (typical) tunneling injector attain better reliability and manufac- Flexible Erase Capability turability compared with alternate approaches. - Uniform 4 KByte sectors This Serial Flash significantly improve performance - Uniform 64 KByte overlay blocks and reliability, while lowering power consumption. The Page Program Mode device writes (Program or Erase) with a single power - 256 Bytes/Page supply of 2.3-3.6V. The total energy consumed is a Fast Erase and Page-Program: function of the applied voltage, current, and time of application. Since for any given voltage range, the - Chip-Erase Time: 250 ms (typical) SuperFlash technology uses less current to program - Sector-Erase Time: 40 ms (typical) and has a shorter erase time, the total energy con- - Block-Erase Time: 80 ms (typical) sumed during any Erase or Program operation is less - Page-Program Time: 4 ms/ 256 bytes than alternative flash memory technologies. (typical) SST25PF040C is offered in 8-lead SOIC and 8-contact End-of-Write Detection WDFN and USON packages. See Figure 2-1 for the pin - Software polling the BUSY bit in Status assignments. Register Hold Pin (HOLD ) - Suspend a serial sequence without deselecting the device Write Protection (WP ) - Enables/Disables the Lock-Down function of the status register Software Write Protection - Write protection through Block-Protection bits in status register 2015-2019 Microchip Technology Inc. DS20005397E-page 1SST25PF040C TO OUR VALUED CUSTOMERS It is our intention to provide our valued customers with the best documentation possible to ensure successful use of your Microchip products. To this end, we will continue to improve our publications to better suit your needs. Our publications will be refined and enhanced as new volumes and updates are introduced. If you have any questions or comments regarding this publication, please contact the Marketing Communications Department via E-mail at docerrors microchip.com. We welcome your feedback. Most Current Data Sheet To obtain the most up-to-date version of this data sheet, please register at our Worldwide Website at: