Serial Quad I/O (SQI) Flash Memory SST26VF016 / SST26VF032 Data Sheet The SST26VF016 / SST26VF032 Serial Quad I/O (SQI) flash device uti- lizes a 4-bit multiplexed I/O serial interface to boost performance while main- taining the compact form factor of standard serial flash devices. Operating at frequencies reaching 80 MHz, the SST26VF016 / SST26VF032 enables mini- mum latency execute-in-place (XIP) capability without the need for code shad- owing on an SRAM. The devices high performance and small footprint make it the ideal choice for mobile handsets, Bluetooth headsets, optical disk drives, GPS applications and other portable electronic products. Further benefits are achieved with SSTs proprietary, high-performance CMOS SuperFlash tech- nology, which significantly improves performance and reliability, and lowers power consumption for high bandwidth, compact designs. Features Single Voltage Read and Write Operations End-of-Write Detection 2.7-3.6V Software polling the BUSY bit in status register Serial Interface Architecture Flexible Erase Capability Nibble-wide multiplexed I/Os with SPI-like serial com- Uniform 4 KByte sectors mand structure Four 8 KByte top parameter overlay blocks -Mode 0 and Mode 3 Four 8 KByte bottom parameter overlay blocks Single-bit, SPI backwards compatible Two 32 KByte overlay blocks (one each top and bottom) -Read, High-Speed Read, and JEDEC ID Read Uniform 64 KByte overlay blocks -SST26VF016 30 blocks High Speed Clock Frequency -SST26VF032 62 blocks 80 MHz Write-Suspend -320 Mbit/s sustained data rate Suspend program or Erase operation to access another Burst Modes block/sector Continuous linear burst Software Reset (RST) mode 8/16/32/64 Byte linear burst with wrap-around Software Write Protection Index Jump Block-Locking Jump to address index within 256 Byte Page -64 KByte blocks, two 32 KByte blocks, and eight 8 Jump to address index within 64 KByte Block KByte parameter blocks Jump to address index in another 64 KByte Block Security ID Superior Reliability One-Time Programmable (OTP) 256 bit, Secure ID Endurance: 100,000 cycles -64 bit Unique, factory pre-programmed identifier Greater than 100 years data retention -192 bit user-programmable Low Power Consumption: Temperature Range Active Read current: 12 mA (typical 80 MHz) Industrial: -40C to +85C Standby current: 8 A (typical) Packages Available Fast Erase and Byte-Program: 8-contact WSON (6mm x 5mm) Chip-Erase time: 35 ms (typical) 8-lead SOIC (200 mil) Sector-/Block-Erase time: 18 ms (typical) AlldevicesareRoHScompliant Page-Program 256 Bytes per page Fast Page Program time in 1 ms (typical) 2010 Silicon Storage Technology, Inc. S71359-05-000 06/10 www.sst.comSerial Quad I/O (SQI) Flash Memory SST26VF016 / SST26VF032 Data Sheet Product Description The Serial Quad I/O (SQI) family of flash-memory devices features a 4-bit, multiplexed I/O inter- face that allows for low-power, high-performance operation in a low pin-count package. System designs using SQI flash devices occupy less board space and ultimately lower system costs. All members of the 26 Series, SQI family are manufactured with SST proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain bet- ter reliability and manufacturability compared with alternate approaches. The SST26VF016/032 significantly improve performance and reliability, while lowering power con- sumption. These devices write (Program or Erase) with a single power supply of 2.7-3.6V. The total energy consumed is a function of the applied voltage, current, and time of application. Since for any given voltage range, the SuperFlash technology uses less current to program and has a shorter erase time, the total energy consumed during any Erase or Program operation is less than alternative flash memory technologies. SST26VF016/032 are offered in both 8-contact WSON (6 mm x 5 mm), and 8-lead SOIC (200 mil) packages. See Figure 2 for pin assignments. 2010 Silicon Storage Technology, Inc. S71359-05-000 06/10 2