SST26VF016B 2.5V/3.0V 16 Mbit Serial Quad I/O (SQI) Flash Memory Security ID Features - One-Time Programmable (OTP) 2 KByte, Single Voltage Read and Write Operations Secure ID - 2.7-3.6V or 2.3-3.6V - 64 bit unique, factory pre-programmed Serial Interface Architecture identifier - Nibble-wide multiplexed I/Os with SPI-like serial - User-programmable area command structure Temperature Range - Mode 0 and Mode 3 - Industrial: -40C to +85C - x1/x2/x4 Serial Peripheral Interface (SPI) Protocol - Industrial Plus: -40C to +105C High Speed Clock Frequency - Extended: -40C to +125C - 2.7-3.6V: 104 MHz max Automotive AECQ-100 Qualified - 2.3-3.6V: 80 MHz max Packages Available Burst Modes - 8-contact WDFN (6mm x 5mm) - Continuous linear burst - 8-lead SOIJ (5.28 mm) - 8/16/32/64 Byte linear burst with wrap-around - 8-lead SOIC (3.90 mm) Superior Reliability All devices are RoHS compliant - Endurance: 100,000 Cycles (min) - Greater than 100 years Data Retention Product Description Low Power Consumption: The Serial Quad I/O (SQI) family of flash-memory - Active Read current: 15 mA (typical 104 MHz) devices features a six-wire, 4-bit I/O interface that - Standby Current: 15 A (typical) allows for low-power, high-performance operation in a Fast Erase Time low pin-count package. SST26VF016B also supports - Sector/Block Erase: 18 ms (typ), 25 ms (max) full command-set compatibility to traditional Serial - Chip Erase: 35 ms (typ), 50 ms (max) Peripheral Interface (SPI) protocol. System designs using SQI flash devices occupy less board space and Page-Program ultimately lower system costs. - 256 Bytes per page in x1 or x4 mode All members of the 26 Series, SQI family are manufac- End-of-Write Detection tured with proprietary, high-performance CMOS Super- - Software polling the BUSY bit in status register Flash technology. The split-gate cell design and thick- Flexible Erase Capability oxide tunneling injector attain better reliability and man- - Uniform 4 KByte sectors ufacturability compared with alternate approaches. - Four 8 KByte top and bottom parameter overlay SST26VF016B significantly improves performance and blocks reliability, while lowering power consumption. These - One 32 KByte top and bottom overlay blocks devices write (Program or Erase) with a single power - Uniform 64 KByte overlay blocks supply of 2.3-3.6V. The total energy consumed is a Write-Suspend function of the applied voltage, current, and time of - Suspend Program or Erase operation to access application. Since for any given voltage range, the another block/sector SuperFlash technology uses less current to program Software Reset (RST) mode and has a shorter erase time, the total energy con- sumed during any Erase or Program operation is less Software Write Protection than alternative flash memory technologies. - Individual-Block Write Protection with permanent lock-down capability SST26VF016B is offered in 8-contact WDFN (6 mm x 5 mm), 8-lead SOIJ (5.28 mm), and 8-lead SOIC - 64 KByte blocks, two 32 KByte blocks, and (3.90 mm). See Figures 2-1 through 2-3 for pin assign- eight 8 KByte parameter blocks ments. - Read Protection on top and bottom 8 KByte parameter blocks 2019 Microchip Technology Inc. DS20005262F-page 1SST26VF016B TO OUR VALUED CUSTOMERS It is our intention to provide our valued customers with the best documentation possible to ensure successful use of your Microchip products. To this end, we will continue to improve our publications to better suit your needs. Our publications will be refined and enhanced as new volumes and updates are introduced. If you have any questions or comments regarding this publication, please contact the Marketing Communications Department via E- mail at docerrors microchip.com. We welcome your feedback. Most Current Data Sheet To obtain the most up-to-date version of this data sheet, please register at our Worldwide Web site at: