SST26VF032BT-104ISM Microchip

SST26VF032B / SST26VF032BA 3.0V 32 Mbit Serial Quad I/O (SQI) Flash Memory Security ID Features - One-Time Programmable (OTP) 2 KByte, Single Voltage Read and Write Operations Secure ID - 2.7-3.6V - 64 bit unique, factory pre-programmed Serial Interface Architecture identifier - Nibble-wide multiplexed I/Os with SPI-like serial - User-programmable area command structure Temperature Range - Mode 0 and Mode 3 - Industrial: -40C to +85C - x1/x2/x4 Serial Peripheral Interface (SPI) Proto- Packages Available col - 8-contact WDFN (6mm x 5mm) High Speed Clock Frequency - 8-lead SOIJ (208mil) - 104 MHz max - 24-ball TBGA (6mm x 8mm) Burst Modes All devices are RoHS compliant - Continuous linear burst - 8/16/32/64 Byte linear burst with wrap-around Product Description Superior Reliability The Serial Quad I/O (SQI) family of flash-memory - Endurance: 100,000 Cycles (min) devices features a six-wire, 4-bit I/O interface that - Greater than 100 years Data Retention allows for low-power, high-performance operation in a Low Power Consumption: low pin-count package. SST26VF032B/032BA also - Active Read current: 15 mA (typical 104 MHz) support full command-set compatibility to traditional - Standby Current: 15 A (typical) Serial Peripheral Interface (SPI) protocol. System designs using SQI flash devices occupy less board Fast Erase Time space and ultimately lower system costs. - Sector/Block Erase: 18 ms (typ), 25 ms (max) - Chip Erase: 35 ms (typ), 50 ms (max) All members of the 26 Series, SQI family are manufac- tured with proprietary, high-performance CMOS Super- Page-Program Flash technology. The split-gate cell design and thick- - 256 Bytes per page in x1 or x4 mode oxide tunneling injector attain better reliability and man- End-of-Write Detection ufacturability compared with alternate approaches. - Software polling the BUSY bit in status register SST26VF032B/032BA significantly improve perfor- Flexible Erase Capability mance and reliability, while lowering power consump- - Uniform 4 KByte sectors tion. These devices write (Program or Erase) with a - Four 8 KByte top and bottom parameter overlay single power supply of 2.7-3.6V. The total energy con- blocks sumed is a function of the applied voltage, current, and - One 32 KByte top and bottom overlay block time of application. Since for any given voltage range, - Uniform 64 KByte overlay blocks the SuperFlash technology uses less current to pro- Write-Suspend gram and has a shorter erase time, the total energy consumed during any Erase or Program operation is - Suspend Program or Erase operation to access less than alternative flash memory technologies. another block/sector Software Reset (RST) mode SST26VF032B/032BA are offered in 8-contact WDFN (6 mm x 5 mm), 8-lead SOIJ (208 mil), 1 and 24-ball Software Write Protection TBGA(6mm x 8mm). See Figure 2-2 for pin assign- - Individual-Block Write Protection with permanent ments. lock-down capability Two configurations are available upon order: - 64 KByte blocks, two 32 KByte blocks, and SST26VF032B default at power-up has the WP and eight 8 KByte parameter blocks Hold pins enabled and SST26VF032BA default at - Read Protection on top and bottom 8 KByte power-up has the WP and Hold pins disabled. parameter blocks 2014 Microchip Technology Inc. Preliminary Specification DS20005218B-page 1SST26VF032B / SST26VF032BA TO OUR VALUED CUSTOMERS It is our intention to provide our valued customers with the best documentation possible to ensure successful use of your Microchip products. To this end, we will continue to improve our publications to better suit your needs. Our publications will be refined and enhanced as new volumes and updates are introduced. If you have any questions or comments regarding this publication, please contact the Marketing Communications Department via E-mail at docerrors microchip.com. We welcome your feedback. Most Current Data Sheet To obtain the most up-to-date version of this data sheet, please register at our Worldwide Web site at: