SST26VF020A 2.5V/3.0V 2-Mbit Serial Quad I/O (SQI) Flash Memory Security ID: Features - One-Time-Programmable (OTP) 2-Kbyte Single Voltage Read and Write Operations: Secure ID: - 2.7V-3.6V or 2.3V-3.6V - 128-bit unique, factory preprogrammed Serial Interface Architecture: identifier - Nibble-wide multiplexed I/Os with SPI-like - User-programmable area serial command structure: Temperature Range: - Mode 0 and Mode 3 - Industrial: -40C to +85C - x1/x2/x4 Serial Peripheral Interface (SPI) Protocol - Extended: -40C to +125C High-Speed Clock Frequency: Automotive AEC-Q100 Qualified - 2.7V-3.6V: 104 MHz maximum (Industrial) Packages Available: - 2.3V-3.6V: 80 MHz maximum (Industrial and - 8-contact WDFN (6 mm x 5 mm) Extended) - 8-lead SOIC (3.90 mm) Burst Modes: All Devices are RoHS Compliant - Continuous linear burst - 8/16/32/64-byte linear burst with wrap-around Product Description Superior Reliability: The Serial Quad I/O (SQI) family of Flash memory - Endurance: 100,000 cycles (minimum) devices features a six-wire, 4-bit I/O interface that - Greater than 100 years data retention allows for low-power, high-performance operation in a Low-Power Consumption: low pin count package. SST26VF020A also supports - Active Read current: 15 mA (typical full command-set compatibility to traditional Serial 104 MHz) Peripheral Interface (SPI) protocol. System designs - Standby Current: 15 A (typical) using SQI Flash devices occupy less board space and ultimately lower system costs. Fast Erase Time: - Sector/Block Erase: 20 ms (typical), 25 ms All members of the 26 Series, SQI family are (maximum) manufactured with proprietary, high-performance technology. The split-gate cell CMOS SuperFlash - Chip Erase: 40 ms (typical), 50 ms design and thick-oxide tunneling injector attain better (maximum) reliability and manufacturability compared with Page-Program: alternate approaches. - 256 bytes per page in x1 or x4 mode SST26VF020A significantly improves performance and End-of-Write Detection: reliability, while lowering power consumption. These - Software polling the BUSY bit in STATUS devices write (Program or Erase) with a single-power register supply of 2.3V-3.6V. The total energy consumed is a Flexible Erase Capability: function of the applied voltage, current and time of - Uniform 4-Kbyte sectors application. Since for any given voltage range, the SuperFlash technology uses less current to program - Uniform 32-Kbyte overlay blocks and has a shorter erase time, the total energy - Uniform 64-Kbyte overlay blocks consumed during any erase or program operation is Write-Suspend: less than alternative Flash memory technologies. - Suspend program or erase operation to See Figure 2-1 for pin assignments. access another block/sector Software Reset (RST) mode Software Write Protection: - Write protection through Block Protection bits in STATUS register 2020-2021 Microchip Technology Inc. and its subsidiaries DS20006279C-page 1SST26VF020A TO OUR VALUED CUSTOMERS It is our intention to provide our valued customers with the best documentation possible to ensure successful use of your Microchip products. To this end, we will continue to improve our publications to better suit your needs. Our publications will be refined and enhanced as new volumes and updates are introduced. If you have any questions or comments regarding this publication, please contact the Marketing Communications Department via E-mail at docerrors microchip.com. We welcome your feedback. Most Current Data Sheet To obtain the most up-to-date version of this data sheet, please register at our Worldwide Website at: