SST26VF016B
2.5V/3.0V 16 Mbit Serial Quad I/O (SQI) Flash Memory
Security ID
Features
- One-Time Programmable (OTP) 2 KByte,
Single Voltage Read and Write Operations
Secure ID
- 2.7-3.6V or 2.3-3.6V
- 64 bit unique, factory pre-programmed
Serial Interface Architecture
identifier
- Nibble-wide multiplexed I/Os with SPI-like serial
- User-programmable area
command structure
Temperature Range
- Mode 0 and Mode 3
- Industrial: -40C to +85C
- x1/x2/x4 Serial Peripheral Interface (SPI) Protocol
- Extended: -40C to +105C
High Speed Clock Frequency
Automotive AECQ-100 Grade 2 and Grade 3
- 2.7-3.6V: 104 MHz max
Packages Available
- 2.3-3.6V: 80 MHz max
- 8-contact WDFN (6mm x 5mm)
Burst Modes
- 8-lead SOIJ (5.28 mm)
- Continuous linear burst
- 8-lead SOIC (3.90 mm)
- 8/16/32/64 Byte linear burst with wrap-around
All devices are RoHS compliant
Superior Reliability
- Endurance: 100,000 Cycles (min)
Product Description
- Greater than 100 years Data Retention
The Serial Quad I/O (SQI) family of flash-memory
Low Power Consumption:
devices features a six-wire, 4-bit I/O interface that
- Active Read current: 15 mA (typical @ 104 MHz)
allows for low-power, high-performance operation in a
- Standby Current: 15 A (typical)
low pin-count package. SST26VF016B also supports
Fast Erase Time
full command-set compatibility to traditional Serial
- Sector/Block Erase: 18 ms (typ), 25 ms (max) Peripheral Interface (SPI) protocol. System designs
using SQI flash devices occupy less board space and
- Chip Erase: 35 ms (typ), 50 ms (max)
ultimately lower system costs.
Page-Program
All members of the 26 Series, SQI family are manufac-
- 256 Bytes per page in x1 or x4 mode
tured with proprietary, high-performance CMOS Super-
End-of-Write Detection
Flash technology. The split-gate cell design and thick-
- Software polling the BUSY bit in status register
oxide tunneling injector attain better reliability and man-
Flexible Erase Capability
ufacturability compared with alternate approaches.
- Uniform 4 KByte sectors
SST26VF016B significantly improves performance and
- Four 8 KByte top and bottom parameter overlay
reliability, while lowering power consumption. These
blocks
devices write (Program or Erase) with a single power
- One 32 KByte top and bottom overlay blocks
supply of 2.3-3.6V. The total energy consumed is a
- Uniform 64 KByte overlay blocks
function of the applied voltage, current, and time of
Write-Suspend
application. Since for any given voltage range, the
- Suspend Program or Erase operation to access
SuperFlash technology uses less current to program
another block/sector
and has a shorter erase time, the total energy con-
sumed during any Erase or Program operation is less
Software Reset (RST) mode
than alternative flash memory technologies.
Software Write Protection
SST26VF016B is offered in 8-contact WDFN (6 mm x
- Individual-Block Write Protection with permanent
5 mm), 8-lead SOIJ (5.28 mm), and 8-lead SOIC
lock-down capability
(3.90 mm). See Figures 2-1 through 2-3 for pin assign-
- 64 KByte blocks, two 32 KByte blocks, and
ments.
eight 8 KByte parameter blocks
- Read Protection on top and bottom 8 KByte
parameter blocks
2014-2017 Microchip Technology Inc. DS20005262D-page 1SST26VF016B
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