SST26WF016B/ SST26WF016BA 1.8V 16 Mbit Serial Quad I/O (SQI) Flash Memory Security ID Features - One-Time Programmable (OTP) 2 KByte, Single Voltage Read and Write Operations Secure ID - 1.65-1.95V - 64 bit unique, factory pre-programmed identifier - User-programmable area Serial Interface Architecture Temperature Range - Mode 0 and Mode 3 - Industrial: -40C to +85C - Nibble-wide multiplexed I/Os with SPI-like serial command structure Packages Available - x1/x2/x4 Serial Peripheral Interface (SPI) Proto- - 8-contact WDFN (6mm x 5mm) col - 8-lead SOIC (150 mil) High Speed Clock Frequency - 8-ball Chip Scale Package (Z-Scale) - 104 MHz max All devices are RoHS compliant Burst Modes - Continuous linear burst Product Description - 8/16/32/64 Byte linear burst with wrap-around The Serial Quad I/O (SQI) family of flash-memory Superior Reliability devices features a six-wire, 4-bit I/O interface that - Endurance: 100,000 Cycles (min) allows for low-power, high-performance operation in a - Greater than 100 years Data Retention low pin-count package. SST26WF016B/016BA also support full command-set compatibility to traditional Low Power Consumption: Serial Peripheral Interface (SPI) protocol. System - Active Read current: 15 mA (typical 104 MHz) designs using SQI flash devices occupy less board - Standby current: 10 A (typical) space and ultimately lower system costs. - Deep Power-Down current: 2.5 A (typical) All members of the 26 Series, SQI family are manufac- Fast Erase Time tured with SST proprietary, high-performance CMOS - Sector/Block Erase: 18 ms (typ), 25 ms (max) SuperFlash technology. The split-gate cell design - Chip Erase: 35 ms (typ), 50 ms (max) and thick-oxide tunneling injector attain better reliability Page-Program and manufacturability compared with alternate - 256 Bytes per page in x1 or x4 mode approaches. End-of-Write Detection The SST26WF016B/SST26WF016BA significantly - Software polling the BUSY bit in status register improves performance and reliability, while lowering Flexible Erase Capability power consumption. This device writes (Program or Erase) with a single power supply of 1.65-1.95V. The - Uniform 4 KByte sectors total energy consumed is a function of the applied volt- - Four 8 KByte top and bottom parameter overlay age, current, and time of application. Since for any blocks given voltage range, the SuperFlash technology uses - One 32 KByte top and bottom overlay block less current to program and has a shorter erase time, - Uniform 64 KByte overlay blocks the total energy consumed during any Erase or Pro- Write-Suspend gram operation is less than alternative flash memory - Suspend Program or Erase operation to access technologies. another block/sector SST26WF016B/016BA is offered in 8-contact WDFN Software Reset (RST) mode (6 mm x 5 mm), 8-lead SOIC (150 mil), and 8-ball Software Protection XFBGA (Z-Scale) packages. See Figure 2-1 for pin - Individual-Block Write Protection with permanent assignments. lock-down capability Two configurations are available upon order: - 64 KByte blocks, two 32 KByte blocks, and SST26WF016B default at power-up has the WP and eight 8 KByte parameter blocks Hold pins enabled and SST26WF016BA default at - Read Protection on top and bottom 8 KByte power-up has the WP and Hold pins disabled. parameter blocks 2014 Microchip Technology Inc. DS20005013D-page 1SST26WF016B/SST26WF016BA TO OUR VALUED CUSTOMERS It is our intention to provide our valued customers with the best documentation possible to ensure successful use of your Microchip products. To this end, we will continue to improve our publications to better suit your needs. Our publications will be refined and enhanced as new volumes and updates are introduced. If you have any questions or comments regarding this publication, please contact the Marketing Communications Department via E- mail at docerrors microchip.com. We welcome your feedback. Most Current Data Sheet To obtain the most up-to-date version of this data sheet, please register at our Worldwide Web site at: