SST26VF080A 2.5V/3.0V 8-Mbit Serial Quad I/O (SQI) Flash Memory Security ID: Features - One-Time-Programmable (OTP) 2-Kbyte Single Voltage Read and Write Operations: Secure ID: - 2.7V-3.6V or 2.3V-3.6V - 128-bit unique, factory preprogrammed Serial Interface Architecture: identifier - Nibble-wide multiplexed I/Os with SPI-like - User-programmable area serial command structure: Temperature Range: - Mode 0 and Mode 3 - Industrial: -40C to +85C - x1/x2/x4 Serial Peripheral Interface (SPI) Protocol - Extended: -40C to +125C High-Speed Clock Frequency: Automotive AEC-Q100 Qualified - 2.7V-3.6V: 104 MHz maximum (Industrial) Packages Available: - 2.3V-3.6V: 80 MHz maximum (Industrial and - 8-contact WDFN (6 mm x 5 mm) Extended) - 8-lead SOIC (3.90 mm) Burst Modes: All Devices are RoHS Compliant - Continuous linear burst - 8/16/32/64-byte linear burst with wrap-around Product Description Superior Reliability: The Serial Quad I/O (SQI) family of Flash memory - Endurance: 100,000 cycles (minimum) devices features a six-wire, 4-bit I/O interface that - Greater than 100 years data retention allows for low-power, high-performance operation in a Low-Power Consumption: low pin count package. SST26VF080A also supports - Active Read current: 15 mA (typical full command-set compatibility to traditional Serial 104 MHz) Peripheral Interface (SPI) protocol. System designs - Standby Current: 15 A (typical) using SQI Flash devices occupy less board space and ultimately lower system costs. Fast Erase Time: - Sector/Block Erase: 20 ms (typical), 25 ms All members of the 26 Series, SQI family are manufac- (maximum) tured with proprietary, high-performance CMOS Super- Flash technology. The split-gate cell design and - Chip Erase: 40 ms (typical), 50 ms thick-oxide tunneling injector attain better reliability and (maximum) manufacturability compared with alternate approaches. Page-Program: SST26VF080A significantly improves performance and - 256 bytes per page in x1 or x4 mode reliability, while lowering power consumption. These End-of-Write Detection: devices write (Program or Erase) with a single-power - Software polling the BUSY bit in STATUS supply of 2.3V-3.6V. The total energy consumed is a register function of the applied voltage, current and time of Flexible Erase Capability: application. Since for any given voltage range, the - Uniform 4-Kbyte sectors SuperFlash technology uses less current to program - Uniform 32-Kbyte overlay blocks and has a shorter erase time, the total energy consumed during any erase or program operation is - Uniform 64-Kbyte overlay blocks less than alternative Flash memory technologies. Write-Suspend: See Figure 2-1 for pin assignments. - Suspend program or erase operation to access another block/sector Software Reset (RST) mode Software Write Protection: - Write protection through Block Protection bits in STATUS register 2019-2020 Microchip Technology Inc. DS20006203B-page 1SST26VF080A TO OUR VALUED CUSTOMERS It is our intention to provide our valued customers with the best documentation possible to ensure successful use of your Microchip products. To this end, we will continue to improve our publications to better suit your needs. Our publications will be refined and enhanced as new volumes and updates are introduced. If you have any questions or comments regarding this publication, please contact the Marketing Communications Department via E-mail at docerrors microchip.com. We welcome your feedback. Most Current Data Sheet To obtain the most up-to-date version of this data sheet, please register at our Worldwide Website at: