X-On Electronics has gained recognition as a prominent supplier of SST26WF064CT-104I/TD NOR Flash across the USA, India, Europe, Australia, and various other global locations. SST26WF064CT-104I/TD NOR Flash are a product manufactured by Microchip. We provide cost-effective solutions for NOR Flash, ensuring timely deliveries around the world.

SST26WF064CT-104I/TD Microchip

SST26WF064CT-104I/TD electronic component of Microchip
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Part No.SST26WF064CT-104I/TD
Manufacturer: Microchip
Category: NOR Flash
Description: NOR Flash SQI Flash Memory 16Mb 1.8V
Datasheet: SST26WF064CT-104I/TD Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.2914 ea
Line Total: USD 1.29 
Availability - 2425
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2425
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1
Multiples : 1
1 : USD 1.2914
10 : USD 1.2718
25 : USD 1.2522
50 : USD 1.2325
100 : USD 1.2129
250 : USD 1.1933
500 : USD 1.1738
1000 : USD 1.1542

   
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We are delighted to provide the SST26WF064CT-104I/TD from our NOR Flash category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SST26WF064CT-104I/TD and other electronic components in the NOR Flash category and beyond.

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SST26VF016B 2.5V/3.0V 16 Mbit Serial Quad I/O (SQI) Flash Memory Security ID Features - One-Time Programmable (OTP) 2 KByte, Single Voltage Read and Write Operations Secure ID - 2.7-3.6V or 2.3-3.6V - 64 bit unique, factory pre-programmed Serial Interface Architecture identifier - Nibble-wide multiplexed I/Os with SPI-like serial - User-programmable area command structure Temperature Range - Mode 0 and Mode 3 - Industrial: -40C to +85C - x1/x2/x4 Serial Peripheral Interface (SPI) Protocol - Extended: -40C to +105C High Speed Clock Frequency Automotive AECQ-100 Grade 2 and Grade 3 - 2.7-3.6V: 104 MHz max Packages Available - 2.3-3.6V: 80 MHz max - 8-contact WDFN (6mm x 5mm) Burst Modes - 8-lead SOIJ (5.28 mm) - Continuous linear burst - 8-lead SOIC (3.90 mm) - 8/16/32/64 Byte linear burst with wrap-around All devices are RoHS compliant Superior Reliability - Endurance: 100,000 Cycles (min) Product Description - Greater than 100 years Data Retention The Serial Quad I/O (SQI) family of flash-memory Low Power Consumption: devices features a six-wire, 4-bit I/O interface that - Active Read current: 15 mA (typical @ 104 MHz) allows for low-power, high-performance operation in a - Standby Current: 15 A (typical) low pin-count package. SST26VF016B also supports Fast Erase Time full command-set compatibility to traditional Serial - Sector/Block Erase: 18 ms (typ), 25 ms (max) Peripheral Interface (SPI) protocol. System designs using SQI flash devices occupy less board space and - Chip Erase: 35 ms (typ), 50 ms (max) ultimately lower system costs. Page-Program All members of the 26 Series, SQI family are manufac- - 256 Bytes per page in x1 or x4 mode tured with proprietary, high-performance CMOS Super- End-of-Write Detection Flash technology. The split-gate cell design and thick- - Software polling the BUSY bit in status register oxide tunneling injector attain better reliability and man- Flexible Erase Capability ufacturability compared with alternate approaches. - Uniform 4 KByte sectors SST26VF016B significantly improves performance and - Four 8 KByte top and bottom parameter overlay reliability, while lowering power consumption. These blocks devices write (Program or Erase) with a single power - One 32 KByte top and bottom overlay blocks supply of 2.3-3.6V. The total energy consumed is a - Uniform 64 KByte overlay blocks function of the applied voltage, current, and time of Write-Suspend application. Since for any given voltage range, the - Suspend Program or Erase operation to access SuperFlash technology uses less current to program another block/sector and has a shorter erase time, the total energy con- sumed during any Erase or Program operation is less Software Reset (RST) mode than alternative flash memory technologies. Software Write Protection SST26VF016B is offered in 8-contact WDFN (6 mm x - Individual-Block Write Protection with permanent 5 mm), 8-lead SOIJ (5.28 mm), and 8-lead SOIC lock-down capability (3.90 mm). See Figures 2-1 through 2-3 for pin assign- - 64 KByte blocks, two 32 KByte blocks, and ments. eight 8 KByte parameter blocks - Read Protection on top and bottom 8 KByte parameter blocks 2014-2017 Microchip Technology Inc. DS20005262D-page 1SST26VF016B TO OUR VALUED CUSTOMERS It is our intention to provide our valued customers with the best documentation possible to ensure successful use of your Microchip products. To this end, we will continue to improve our publications to better suit your needs. Our publications will be refined and enhanced as new volumes and updates are introduced. If you have any questions or comments regarding this publication, please contact the Marketing Communications Department via E- mail at docerrors@microchip.com. We welcome your feedback. Most Current Data Sheet To obtain the most up-to-date version of this data sheet, please register at our Worldwide Web site at:

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
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