2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash SST39LF200A / SST39LF400A / SST39LF800A A Microchip Technology Company SST39VF200A / SST39VF400A / SST39VF800A Data Sheet The SST39LF200A/400A/800A and SST39VF200A/400A/800A devices are 128K x16 / 256K x16 / 512K x16 CMOS Multi-Purpose Flash (MPF) manufactured with SST proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufac- turability compared with alternate approaches. The SST39LF200A/400A/800A write (Program or Erase) with a 3.0-3.6V power supply. The SST39VF200A/400A/ 800A write (Program or Erase) with a 2.7-3.6V power supply. These devices con- form to JEDEC standard pinouts for x16 memories. Features: Organized as 128K x16 / 256K x16 / 512K x16 Fast Erase and Word-Program Sector-Erase Time: 18 ms (typical) Single Voltage Read and Write Operations Block-Erase Time: 18 ms (typical) Chip-Erase Time: 70 ms (typical) 3.0-3.6V for SST39LF200A/400A/800A Word-Program Time: 14 s (typical) 2.7-3.6V for SST39VF200A/400A/800A Chip Rewrite Time: Superior Reliability 2 seconds (typical) for SST39LF/VF200A 4 seconds (typical) for SST39LF/VF400A Endurance: 100,000 Cycles (typical) 8 seconds (typical) for SST39LF/VF800A Greater than 100 years Data Retention Automatic Write Timing Low Power Consumption Internal V Generation PP (typical values at 14 MHz) Active Current: 9 mA (typical) End-of-Write Detection Standby Current: 3 A (typical) Toggle Bit Data Polling Sector-Erase Capability Uniform 2 KWord sectors CMOS I/O Compatibility Block-Erase Capability JEDEC Standard Uniform 32 KWord blocks Flash EEPROM Pinouts and command sets Fast Read Access Time Packages Available 55 ns for SST39LF200A/400A/800A 48-lead TSOP (12mm x 20mm) 70 ns for SST39VF200A/400A/800A 48-ball TFBGA (6mm x 8mm) 48-ball WFBGA (4mm x 6mm) Latched Address and Data 48-bumpXFLGA(4mmx6mm)4and8Mbit Allnon-Pb(lead-free)devicesareRoHScompliant 2011 Silicon Storage Technology, Inc. www.microchip.com DS25001A 03/112 Mbit / 4 Mbit / 8 Mbit Multi-Purpose Flash SST39LF200A / SST39LF400A / SST39LF800A A Microchip Technology Company SST39VF200A / SST39VF400A / SST39VF800A Data Sheet Product Description The SST39LF200A/400A/800A and SST39VF200A/400A/800A devices are 128K x16 / 256K x16 / 512K x16 CMOS Multi-Purpose Flash (MPF) manufactured with SST proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39LF200A/400A/800A write (Program or Erase) with a 3.0-3.6V power supply. The SST39VF200A/400A/800A write (Program or Erase) with a 2.7-3.6V power supply. These devices conform to JEDEC standard pinouts for x16 memories. Featuring high-performance Word-Program, the SST39LF200A/400A/800A and SST39VF200A/400A/ 800A devices provide a typical Word-Program time of 14 sec. The devices use Toggle Bit or Data Polling to detect the completion of the Program or Erase operation. To protect against inadvertent write, they have on-chip hardware and software data protection schemes. Designed, manufactured, and tested for a wide spectrum of applications, these devices are offered with a guaranteed typical endurance of 100,000 cycles. Data retention is rated at greater than 100 years. The SST39LF200A/400A/800A and SST39VF200A/400A/800A devices are suited for applications that require convenient and economical updating of program, configuration, or data memory. For all system applications, they significantly improve performance and reliability, while lowering power consumption. They inherently use less energy during Erase and Program than alternative flash technologies. When programming a flash device, the total energy consumed is a function of the applied voltage, current, and time of application. Since for any given voltage range, the SuperFlash technology uses less cur- rent to program and has a shorter erase time, the total energy consumed during any Erase or Program operation is less than alternative flash technologies. These devices also improve flexibility while lower- ing the cost for program, data, and configuration storage applications. The SuperFlash technology provides fixed Erase and Program times, independent of the number of Erase/Program cycles that have occurred. Therefore the system software or hardware does not have to be modified or de-rated as is necessary with alternative flash technologies, whose Erase and Pro- gram times increase with accumulated Erase/Program cycles. To meet surface mount requirements, the SST39LF200A/400A/800A and SST39VF200A/400A/800A are offered in 48-lead TSOP packages and 48-ball TFBGA packages as well as Micro-Packages. See Figures 2, 3, and 4 for pin assignments. 2011 Silicon Storage Technology, Inc. DS25001A 03/11 2