Not recommended for new designs. Please use SST39VF1601C and SST39VF3201B. 16 Mbit / 32 Mbit / (x16) Multi-Purpose Flash Plus SST39VF1601 / SST39VF3201 A Microchip Technology Company SST39VF1602 / SST39VF3202 Not Recommended for New Designs The SST39VF1601/1602 and SST39VF3201/3202 devices are 1M x16 and 2M x16, respectively, CMOS Multi-Purpose Flash Plus (MPF+) manufactured with SST s proprietary, high performance CMOS SuperFlash technology. The split- gate cell design and thick-oxide tunneling injector attain better reliability and man- ufacturability compared with alternate approaches. The SST39VF1601/1602/ 3201/3202 write (Program or Erase) with a 2.7-3.6V power supply. These devices conforms to JEDEC standard pinouts for x16 memories. Features Organized as 1M x16: SST39VF1601/1602 Security-ID Feature 2M x16: SST39VF3201/3202 SST: 128 bits User: 128 bits Single Voltage Read and Write Operations Fast Read Access Time: 2.7-3.6V 70ns Superior Reliability Latched Address and Data Endurance: 100,000 Cycles (Typical) Fast Erase and Word-Program: Greater than 100 years Data Retention Sector-Erase Time: 18 ms (typical) Low Power Consumption (typical values at 5 MHz) Block-Erase Time: 18 ms (typical) Chip-Erase Time: 40 ms (typical) Active Current: 9 mA (typical) Word-Program Time: 7 s (typical) Standby Current: 3 A (typical) Auto Low Power Mode: 3 A (typical) Automatic Write Timing Hardware Block-Protection/WP Input Pin Internal V Generation PP Top Block-Protection (top 32 KWord) End-of-Write Detection for SST39VF1602/3202 Bottom Block-Protection (bottom 32 KWord) Toggle Bits for SST39VF1601/3201 Data Polling Sector-Erase Capability CMOS I/O Compatibility Uniform 2 KWord sectors JEDEC Standard Block-Erase Capability Flash EEPROM Pinouts and command sets Uniform 32 KWord blocks Packages Available Chip-Erase Capability 48-lead TSOP (12mm x 20mm) 48-ball TFBGA (6mm x 8mm) Erase-Suspend/Erase-Resume Capabilities AlldevicesareRoHScompliant Hardware Reset Pin (RST ) 2011 Silicon Storage Technology, Inc. www.microchip.com DS25028A 08/1116 Mbit / 32 Mbit Multi-Purpose Flash Plus SST39VF1601 / SST39VF3201 A Microchip Technology Company SST39VF1602 / SST39VF3202 Not Recommended for New Designs Product Description The SST39VF160x and SST39VF320x devices are 1M x16 and 2M x16, respectively, CMOS Multi- Purpose Flash Plus (MPF+) manufactured with SSTs proprietary, high performance CMOS Super- Flash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39VF160x/320x write (Program or Erase) with a 2.7-3.6V power supply. These devices conform to JEDEC standard pinouts for x16 memories. Featuring high performance Word-Program, the SST39VF160x/320x devices provide a typical Word- Program time of 7 sec. These devices use Toggle Bit or Data Polling to indicate the completion of Program operation. To protect against inadvertent write, they have on-chip hardware and Software Data Protection schemes. Designed, manufactured, and tested for a wide spectrum of applications, these devices are offered with a guaranteed typical endurance of 100,000 cycles. Data retention is rated at greater than 100 years. The SST39VF160x/320x devices are suited for applications that require convenient and economical updating of program, configuration, or data memory. For all system applications, they significantly improve performance and reliability, while lowering power consumption. They inherently use less energy during Erase and Program than alternative flash technologies. The total energy consumed is a function of the applied voltage, current, and time of application. Since for any given voltage range, the SuperFlash technology uses less current to program and has a shorter erase time, the total energy consumed during any Erase or Program operation is less than alternative flash technologies. These devices also improve flexibility while lowering the cost for program, data, and configuration storage applications. The SuperFlash technology provides fixed Erase and Program times, independent of the number of Erase/Program cycles that have occurred. Therefore the system software or hardware does not have to be modified or de-rated as is necessary with alternative flash technologies, whose Erase and Pro- gram times increase with accumulated Erase/Program cycles. To meet high density, surface mount requirements, the SST39VF160x/320x are offered in 48-lead TSOP and 48-ball TFBGA packages. See Figures 2 and 3 for pin assignments. 2011 Silicon Storage Technology, Inc. DS25028A 08/11 2