64Mb: 3V Embedded Parallel NOR Flash Features Parallel NOR Flash Embedded Memory M29W640FT, M29W640FB UNLOCK BYPASS PROGRAM command Features Faster production/batch programming Supply voltage V /WP pin for fast program and write protect PP V = 2.73.6V (program, erase, read) CC Temporary block unprotection mode V = 12V for fast program (optional) PP Common Flash interface Asynchronous random/page read 64-bit security code Page width: 4 words Extended memory block Page access: 25ns Extra block used as security block or to store ad- Random access: 60ns, 70ns ditional information Program time Low power consumption 10s per byte/word TYP Standby and automatic standby 4 words/8 bytes program 100,000 PROGRAM/ERASE cycles per block Memory organization Electronic signature 135 memory blocks Manufacturer code: 0020h 1 boot block and 7 parameter blocks, 8KB each Device code M29W640FT: 22EDh (top or bottom) Device code M29W640FB: 22FDh 127 main blocks, 64KB each RoHS-compliant packages Program/erase controller 48-pin TSOP (N) 12mm x 20mm Embedded byte/word program algorithms 48-ball TFBGA (ZA) 6mm x 8mm Program/erase suspend and resume Read from any block during a PROGRAM SUS- PEND operation Read or program another block during an ERASE SUSPEND operation PDF: 09005aef8551a2ac Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 m29w 640f.pdf - Rev. B 1/16 EN 2013 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.64Mb: 3V Embedded Parallel NOR Flash Features Part Numbering Information Available with extended memory block prelocked by Micron. Devices are shipped from the factory with memory content bits erased to 1. For available options, such as packages or speed, or for further information, contact your Micron sales representative. Part numbers can be verified at www.micron.com. Feature and specification compari- son by device type is available at www.micron.com/products. Contact the factory for devices not found. Table 1: Part Number Information Part Number Category Category Details Device Type M29 = Parallel Flash memory Operating Voltage W = V = 2.7 to 3.6V CC Device Function 640F = 64Mb (x8/x16) boot block Array Matrix T = Top boot B = Bottom boot Speed 60 = 60ns 70 = 70ns Package N = 48-pin TSOP: 12mm x 20mm ZA = 48-ball TFBGA, 6mm x 8mm, 0.80mm pitch Temperature Range 6 = 40C to 85C Shipping Options E = RoHS-compliant package, standard packing F = RoHS-compliant package, tape and reel packing PDF: 09005aef8551a2ac Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 m29w 640f.pdf - Rev. B 1/16 EN 2013 Micron Technology, Inc. All rights reserved.