64Mb: 3V Embedded Parallel NOR Flash Features Parallel NOR Flash Embedded Memory M29W640GH, M29W640GL M29W640GT, M29W640GB Common Flash interface Features 64-bit security code Supply voltage 128-word extended memory block V = 2.73.6V (program, erase, read) CC Extra block used as security block or to store ad- V = 12V for fast program (optional) PP ditional information Asynchronous random/page read Low power consumption: Standby and automatic Page width: 4 words mode Page access: 25ns 100,000 PROGRAM/ERASE cycles per block Random access: 60ns, 70ns, 90ns Electronic signature Fast program commands Manufacturer code: 0020h 2-word/4-byte program (without V = 12V) PP Device summary: part number and device code 4-word/8-byte program (with V = 12V) PP M29W640GH: uniform, last block protected by 16-word/32-byte write buffer V /WP PP Programming time 227Eh + 220Ch + 2201h 10s per byte/word TYP M29W640GL: uniform, first block protected by Chip program time: 10 s (4-word program) V /WP PP Double word/quadruple byte program 227Eh + 220Ch + 2200h Memory organization M29W640GT: top boot block M29W640GH/L 128 main blocks, 64KB each 227Eh + 2210h + 2201h M29W640GT/B 127 main blocks, 64KB each and M29W640GB: bottom boot block 8 boot blocks, 8KB each 227Eh + 2210h + 2200h Program/erase controller RoHS-compliant packages Embedded byte/word program algorithms 48-pin TSOP (N/NA) 12mm x 20mm Program/erase suspend and resume 56-pin TSOP (NB) 14mm x 20mm Read from any block during a PROGRAM SUS- 48-ball TFBGA (ZA) 6mm x 8mm PEND operation 64-ball FBGA (ZS) 11mm x 13mm Read or program another block during an ERASE 64-ball TBGA (ZF) 10mm x 13mm SUSPEND operation Automotive certified parts available Hardware block protection V /WP pin for fast program and write protect PP Temporary block unprotect mode Part Numbering Information Available with extended memory block prelocked by Micron. Devices are shipped from the factory with memory content bits erased to 1. For available options, such as packages or speed, or for further information, contact your Micron sales representative. Part numbers can be verified at www.micron.com. Feature and specification compari- son by device type is available at www.micron.com/products. Contact the factory for devices not found. Table 1: Part Number Information Part Number Category Category Details Device Type M29 = Parallel Flash memory PDF: 09005aef84e35115 Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 m29W 640GH/L GT/B.pdf - Rev. E 02/18 EN 2013 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.64Mb: 3V Embedded Parallel NOR Flash Features Table 1: Part Number Information (Continued) Part Number Category Category Details Operating Voltage W = 2.7 to 3.6V Device Function 640G = 64Mb (x8/x16) boot block, uniform or boot block Array Matrix T = Top boot B = Bottom boot L = First block protected by V /WP PP H = Last block protected by V /WP PP Speed 60 = 60ns (in conjunction with temperature range 6 denotes industrial grade 40C to 85C parts) 6A = 60ns (in conjunction with temperature range 6 denotes automotive grade 40C to 85C parts) 7A = 70ns (in conjunction with temperature range 6 denotes automotive grade 40C to 85C parts) 70 = 70ns (in conjunction with temperature range 6 denotes industrial grade 40C to 85C parts temperature range = 3 denotes automotive grade 40C to 125C parts) 90 = 90ns (in conjunction with temperature range 6 denotes industrial grade 40C to 85C parts) Package N/NA = 48-pin TSOP, 12mm x 20mm NB = 56-pin TSOP, 14mm x 20mm (available upon request) ZA = 48-ball TFBGA, 6mm x 8mm, 0.8mm pitch ZS = 64-ball FBGA, 11mm x 13mm, 1mm pitch ZF = 64-ball TBGA, 10mm x 13mm, 1mm pitch (available upon request) Temperature 6 = 40C to 85C Range 3 = 40C to 125C (Automotive) Shipping Options E = RoHS-compliant package, standard packing F = RoHS-compliant package, tape and reel packing PDF: 09005aef84e35115 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 m29W 640GH/L GT/B.pdf - Rev. E 02/18 EN 2013 Micron Technology, Inc. All rights reserved.