X-On Electronics has gained recognition as a prominent supplier of M29W800DB70ZE6E NOR Flash across the USA, India, Europe, Australia, and various other global locations. M29W800DB70ZE6E NOR Flash are a product manufactured by Micron. We provide cost-effective solutions for NOR Flash, ensuring timely deliveries around the world.

M29W800DB70ZE6E Micron

Name: M29W800DB70ZE6E
Brand: Micron
SKU: M29W800DB70ZE6E_Micron
Availability: OutOfStock
Rating: 5 (11 reviews)

M29W800DB70ZE6E electronic component of Micron

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Part No.	M29W800DB70ZE6E
Manufacturer:	Micron
Category:	NOR Flash
Description:	NOR Flash Parallel 3V/3.3V 8M-bit 1M x 8/512K x 16 70ns 48-Pin TFBGA Tray
Datasheet:	M29W800DB70ZE6E Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

204: USD 1.0078 ea
Line Total: USD 205.59

Availability - 0

MOQ: 204 Multiples: 204
Pack Size: 204

M29W800DB70ZE6E More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Fri. 22 Nov to Thu. 28 Nov MOQ : 204 Multiples : 204	204 : USD 1.0078

We are delighted to provide the M29W800DB70ZE6E from our NOR Flash category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the M29W800DB70ZE6E and other electronic components in the NOR Flash category and beyond.

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Additional Infomation About Product

M29W800DT M29W800DB 8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 3V Supply Flash Memory FEATURES SUMMARY SUPPLY VOLTAGE Figure 1. Packages V = 2.7V to 3.6V for Program, Erase CC and Read ACCESS TIMES: 45, 70, 90ns PROGRAMMING TIME 10s per Byte/Word typical 19 MEMORY BLOCKS 1 Boot Block (Top or Bottom Location) SO44 (M) 2 Parameter and 16 Main Blocks PROGRAM/ERASE CONTROLLER Embedded Byte/Word Program algorithms ERASE SUSPEND and RESUME MODES Read and Program another Block during Erase Suspend TSOP48 (N) UNLOCK BYPASS PROGRAM COMMAND 12 x 20mm Faster Production/Batch Programming TEMPORARY BLOCK UNPROTECTION MODE FBGA COMMON FLASH INTERFACE 64 bit Security Code LOW POWER CONSUMPTION TFBGA48 (ZA) Standby and Automatic Standby 6 x 9 mm 100,000 PROGRAM/ERASE CYCLES per BLOCK FBGA ELECTRONIC SIGNATURE Manufacturer Code: 0020h Top Device Code M29W800DT: 22D7h TFBGA48 (ZE) Bottom Device Code M29W800DB: 6 x 8mm 225Bh September 2004 1/42M29W800DT, M29W800DB TABLE OF CONTENTS FEATURES SUMMARY . 1 Figure 1. Packages 1 SUMMARY DESCRIPTION . 5 Figure 2. Logic Diagram 5 Table 1. Signal Names 5 Figure 3. SO Connections . 6 Figure 4. TSOP Connections 6 Figure 5. TFBGA Connections (Top view through package) 7 Figure 6. Block Addresses (x8) . 8 Figure 7. Block Addresses (x16) 9 SIGNAL DESCRIPTIONS . 10 Address Inputs (A0-A18) . 10 Data Inputs/Outputs (DQ0-DQ7) . 10 Data Inputs/Outputs (DQ8-DQ14) 10 Data Input/Output or Address Input (DQ15A-1) 10 Chip Enable (E) 10 Output Enable (G) 10 Write Enable (W) . 10 Reset/Block Temporary Unprotect (RP) 10 Ready/Busy Output (RB) . 10 Byte/Word Organization Select (BYTE) 10 V Supply Voltage . 10 CC V Ground . 10 SS BUS OPERATIONS 11 Bus Read . 11 Bus Write . 11 Output Disable . 11 Standby 11 Automatic Standby 11 Special Bus Operations 11 Electronic Signature . 11 Block Protection and Blocks Unprotection 11 Table 2. Bus Operations, BYTE = V 11 IL Table 3. Bus Operations, BYTE = V 12 IH COMMAND INTERFACE . 12 Read/Reset Command . 12 Auto Select Command . 12 Program Command . 12 Unlock Bypass Command 13 2/42

HS Compliance

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)

EL9 may also be referenced as

Elpida Memory
ELPIDA MEMORY INC
IE6
MI9
MICRON SEMICONDUCTOR
Micron Tech
MICRON TECHNOLOGY
Micron Technology Inc
Micron Technology Inc.
NU9
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC. (VA)

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Manufacturer Micron Micron
Product Category NOR Flash NOR Flash
Mounting Style Surface Mount Surface Mount
Package / Case TFBGA TFBGA
Interface Type Parallel Parallel
Organisation 1M/512K 1M/512K
Timing Type Asynchronous Asynchronous
Data Bus Width 8/16 (B) 8/16 (B)
Supply Voltage - Min 2.7 V 2.7 V
Supply Voltage - Max 3.6 V 3.6 V
Supply Current - Max 10 mA 10 mA
Minimum Operating Temperature - 40 C - 40 C
Maximum Operating Temperature 85 C 85 C
Packaging Tray Tray
Access Time Max 70 ns 70 ns
Address Bus 20/19(B) 20/19(B)
Boot Type Bottom Bottom
Cell Type Nor Nor
Operating Temp Range - 40 C To 85 C - 40 C To 85 C
Pin Count 48 48
Program/Erase Volt Typ 2.7 To 3.6(V) 2.7 To 3.6(V)
Density 8388608(Bit) 8388608(Bit)
Operating Temperature Classification industrial industrial
Programmable Yes Yes
Rad Hardened No No
Operating Supply Voltage Typ 3/3.3 V 3/3.3 V
Deleted Compliant Compliant