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X-On Electronics has gained recognition as a prominent supplier of TC58BYG1S3HBAI4 NAND Flash across the USA, India, Europe, Australia, and various other global locations. TC58BYG1S3HBAI4 NAND Flash are a product manufactured by Toshiba. We provide cost-effective solutions for NAND Flash, ensuring timely deliveries around the world.

TC58BYG1S3HBAI4 Toshiba

TC58BYG1S3HBAI4 electronic component of Toshiba
TC58BYG1S3HBAI4 Toshiba
TC58BYG1S3HBAI4 NAND Flash
TC58BYG1S3HBAI4  Semiconductors

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See Product Specifications
Part No. TC58BYG1S3HBAI4
Manufacturer: Toshiba
Category: NAND Flash
Description: Toshiba Flash Memory 1.8V 2Gbit NAND EEPROM
Datasheet: TC58BYG1S3HBAI4 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 5.467 ea
Line Total: USD 5.47 
Availability - 40
Ship by Wed. 08 Jan to Fri. 10 Jan
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
40
Ship by Wed. 08 Jan to Fri. 10 Jan
MOQ : 1
Multiples : 1
1 : USD 5.467
10 : USD 4.642

   
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We are delighted to provide the TC58BYG1S3HBAI4 from our NAND Flash category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TC58BYG1S3HBAI4 and other electronic components in the NAND Flash category and beyond.

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TC58BYG1S3HBAI4 MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 2 GBIT (256M 8 BIT) CMOS NAND E PROM DESCRIPTION The TC58BYG1S3HBAI4 is a single 1.8V 2Gbit (2,214,592,512 bits) NAND Electrically Erasable and 2 Programmable Read-Only Memory (NAND E PROM) organized as (2048 + 64) bytes 64 pages 2048 blocks. The device has a 2112b-yte static register which allows program and read data to be transferred between the register and the memory cell array in 2112-bytes increments. The Erase operation is implemented in a single block unit (128 Kbytes + 4 Kbytes: 2112 bytes 64 pages). The TC58BYG1S3HBAI4 is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for command inputs. The Erase and Program operations are automatically executed making the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-density non-volatile memory data storage. The TC58BYG1S3HBAI4 has ECC logic on the chip and 8bit read errors for each 528Bytes can be corrected internally. FEATURES Organization x8 Memory cell array 2112 128K 8 Register 2112 8 Page size 2112 bytes Block size (128K + 4K) bytes Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Read, Multi Page Program, Multi Block Erase, ECC Status Read Mode control Serial input/output Command control Number of valid blocks Min 2008 blocks Max 2048 blocks Power supply VCC = 1.7V to 1.95V Access time Cell array to register 40 s typ. (Single Page Read) / 55 s typ. (Multi Page Read) Read Cycle Time 25 ns min (C =30pF) L Program/Erase time Auto Page Program 330 s/page typ. Auto Block Erase 3.5 ms/block typ. Operating current Read (25 ns cycle) 30 mA max Program (avg.) 30 mA max Erase (avg.) 30 mA max Standby 50 A max Package P-TFBGA63-0911-0.80CZ (Weight: 0.15 g typ.) 8bit ECC for each 528Byte is implemented on the chip. 2012-2018 Toshiba Memory Corporation 2018-06-01C 1 TC58BYG1S3HBAI4 PIN ASSIGNMENT (TOP VIEW) 1 2 3 4 5 6 7 8 9 10 A NC NC NC NC B NC NC NC C WP ALE V CE WE RY/BY SS D NC RE CLE NC NC NC E NC NC NC NC NC NC F NC NC NC NC NC NC G NC NC NC NC NC NC H NC I/O1 NC NC NC V CC J NC I/O2 NC V I/O6 I/O8 CC K V I/O3 I/O4 I/O5 I/O7 V SS SS L NC NC NC NC M NC NC NC NC PIN NAMES I/O1 to I/O8 I/O port CE Chip enable WE Write enable RE Read enable CLE Command latch enable ALE Address latch enable WP Write protect RY/BY Ready/Busy V Power supply CC V Ground SS NC No Connection 2012-2018 Toshiba Memory Corporation 2018-06-01C 2

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4
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