X-On Electronics has gained recognition as a prominent supplier of TC58CVG1S3HRAIG NAND Flash across the USA, India, Europe, Australia, and various other global locations. TC58CVG1S3HRAIG NAND Flash are a product manufactured by Toshiba. We provide cost-effective solutions for NAND Flash, ensuring timely deliveries around the world.

TC58CVG1S3HRAIG Toshiba

TC58CVG1S3HRAIG electronic component of Toshiba
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Part No.TC58CVG1S3HRAIG
Manufacturer: Toshiba
Category: NAND Flash
Description: NAND Flash 3.3V 2Gb 24nm Serial NAND
Datasheet: TC58CVG1S3HRAIG Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 9.1388
10 : USD 3.4227
25 : USD 3.3412
50 : USD 3.3179
100 : USD 3.0851
250 : USD 3.0735
500 : USD 3.0735
1000 : USD 2.9337
2500 : USD 2.8872
N/A

Obsolete
   
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We are delighted to provide the TC58CVG1S3HRAIG from our NAND Flash category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TC58CVG1S3HRAIG and other electronic components in the NAND Flash category and beyond.

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TC58CVG1S3HxAIx TOSHIBA Serial Interface NAND Technical Data Sheet Rev. 1.1 2016 11 08 TOSHIBA Storage & Electronic Devices Solutions Memory Division 2016 TOSHIBA CORPORATION 0 2016-11-08C TC58CVG1S3HxAIx CONTENTS 1. Introduction .............................................................................................................................................. 4 1.1. General Description ................................................................................................................................. 4 1.2. Definitions and Abbreviations ................................................................................................................. 4 1.3. Features .................................................................................................................................................... 5 2. Memory Organization .............................................................................................................................. 6 2.1. Pin Descriptions ....................................................................................................................................... 6 2.2. Pin Assignment (Top View) ...................................................................................................................... 6 2.3. Block Diagram .......................................................................................................................................... 7 2.4. Cell Layout ............................................................................................................................................... 7 2.5. Addressing ................................................................................................................................................ 8 2.6. Valid Blocks .............................................................................................................................................. 8 3. Physical Interface..................................................................................................................................... 9 3.1. Absolute Maximum Rating ...................................................................................................................... 9 3.2. Capacitance .............................................................................................................................................. 9 3.3. Recommended DC Operating Conditions ............................................................................................... 9 3.4. Signal Timing ......................................................................................................................................... 10 3.5. AC Characteristics ................................................................................................................................. 12 3.6. DC Operating Characteristics ............................................................................................................... 12 3.7. Programming, Reading and Erasing Characteristics ........................................................................... 13 3.8. Power ON/OFF Sequence ...................................................................................................................... 13 3.9. AC Test Condition .................................................................................................................................. 13 4. Command Description and Device Operation ....................................................................................... 14 4.1. Command Set ......................................................................................................................................... 14 4.2. Page Read Operation ............................................................................................................................. 15 4.2.1. Read Cell Array (13h) ............................................................................................................................ 15 4.2.2. Read Buffer (03h or 0Bh) ....................................................................................................................... 16 4.2.3. Read Buffer x2 (3Bh).............................................................................................................................. 17 4.2.4. Read Buffer x4 (6Bh).............................................................................................................................. 18 4.3. Page Read Operation - High Speed Mode ............................................................................................. 18 4.4. Page Program Operation ....................................................................................................................... 19 4.4.1. Program Load (02h) ............................................................................................................................... 19 4.4.2. Program Execute (10h) .......................................................................................................................... 20 4.4.3. Program Load Random Data (84h) ....................................................................................................... 21 4.5. Internal Data Move Operation .............................................................................................................. 21 4.6. Block Erase (D8h) .................................................................................................................................. 22 4.7. Reset (FFh or FEh) ................................................................................................................................ 23 4.8. Write Enable (06h) / Write Disable (04h) .............................................................................................. 24 4.9. Set Feature (1Fh) / Get Feature (0Fh) .................................................................................................. 25 4.9.1. Set Feature (1Fh) ................................................................................................................................... 27 4.9.2. Get Feature (0Fh) .................................................................................................................................. 27 4.10. Block Lock Operation ............................................................................................................................. 28 4.11. Block Protection Operation (One Time Program) ................................................................................. 28 4.11.1. Protect Execute (2Ah) ............................................................................................................................ 29 4.12. Parameter Page Read Operation ........................................................................................................... 30 4.13. Read ID (9Fh) ......................................................................................................................................... 31 4.14. Unique ID Read Operation .................................................................................................................... 31 4.15. Bad Block Inhibit ................................................................................................................................... 31 4.16. Internal ECC .......................................................................................................................................... 32 4.16.1. ECC Switch ............................................................................................................................................ 32 4.16.2. ECC Status ............................................................................................................................................. 32 4.16.3. ECC Bit Flip Count Detection ............................................................................................................... 32 4.16.4. ECC Bit Flip Count Report .................................................................................................................... 33 4.16.5. ECC Maximum Bit Flip Count Report .................................................................................................. 34 5. Package Information .............................................................................................................................. 35 5.1. WSON8 (P-WSON8-0608-1.27-003) ...................................................................................................... 35 5.2. SOP16 (P-SOP16-1111-1.27-001) ........................................................................................................... 35 6. Application Notes ................................................................................................................................... 36 6.1. Prohibition of Unspecified Commands .................................................................................................. 36 6.2. Restriction of Commands while in the Busy State ............................................................................... 36 2016 TOSHIBA CORPORATION 1 2016-11-08C

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4
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