X-On Electronics has gained recognition as a prominent supplier of TC58NVG0S3ETAI0 NAND Flash across the USA, India, Europe, Australia, and various other global locations. TC58NVG0S3ETAI0 NAND Flash are a product manufactured by Toshiba. We provide cost-effective solutions for NAND Flash, ensuring timely deliveries around the world.

TC58NVG0S3ETAI0 Toshiba

TC58NVG0S3ETAI0 electronic component of Toshiba
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Part No.TC58NVG0S3ETAI0
Manufacturer: Toshiba
Category: NAND Flash
Description: Flash Memory 1Gb 3.3V SLC NAND Parallel EEPROM
Datasheet: TC58NVG0S3ETAI0 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



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0
MOQ : 96
Multiples : 1
96 : USD 5.4563
9600 : USD 4.5802
960000 : USD 4.1676
N/A

   
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We are delighted to provide the TC58NVG0S3ETAI0 from our NAND Flash category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TC58NVG0S3ETAI0 and other electronic components in the NAND Flash category and beyond.

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TC58NVG0S3ETAI0 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 1 GBIT (128M 8 BIT) CMOS NAND E PROM DESCRIPTION The TC58NVG0S3E is a single 3.3V 1 Gbit (1,107,296,256 bits) NAND Electrically Erasable and Programmable 2 Read-Only Memory (NAND E PROM) organized as (2048 + 64) bytes 64 pages 1024blocks. The device has two 2112-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 2112-byte increments. The Erase operation is implemented in a single block unit (128 Kbytes + 4 Kbytes: 2112 bytes 64 pages). The TC58NVG0S3E is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for command inputs. The Erase and Program operations are automatically executed making the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-density non-volatile memory data storage. FEATURES Organization x8 Memory cell array 2112 64K 8 Register 2112 8 Page size 2112 bytes Block size (128K + 4K) bytes Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Program, Multi Block Erase, Multi Page Copy, Multi Page Read Mode control Serial input/output Command control Number of valid blocks Min 1004 blocks Max 1024 blocks Power supply V = 2.7V to 3.6V CC Access time Cell array to register 25 s max Serial Read Cycle 25 ns min (CL=100pF) Program/Erase time Auto Page Program 300 s/page typ. Auto Block Erase 2.5 ms/block typ. Operating current Read (25 ns cycle) 30 mA max. Program (avg.) 30 mA max Erase (avg.) 30 mA max Standby 50 A max Package TSOP I 48-P-1220-0.50 (Weight: 0.53 g typ.) 1 2011-03-01C TC58NVG0S3ETAI0 PIN ASSIGNMENT (TOP VIEW) TC58NVG0S3ETAI0 8 8 NC 1 48 NC NC 2 47 NC NC 3 46 NC NC 4 45 NC NC 5 44 I/O8 NC 6 43 I/O7 RY /BY7 42 I/O6 RE8 41 I/O5 CE9 40 NC NC 10 39 NC NC 11 38 NC V 12 37 V CC CC V V 13 36 SS SS NC NC 14 35 NC 15 34 NC CLE 16 33 NC ALE I/O4 17 32 WE I/O3 18 31 WP 19 30 I/O2 NC I/O1 20 29 NC NC 21 28 NC 22 27 NC NC NC 23 26 NC 24 25 NC PIN NAMES I/O1 to I/O8 I/O port CE Chip enable WE Write enable RE Read enable CLE Command latch enable ALE Address latch enable WP Write protect RY/BY Ready/Busy V Power supply CC V Ground SS 2 2011-03-01C

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
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