M29W640GB70ZA6F Micron

M29W640GH M29W640GL M29W640GT M29W640GB 64-Mbit (8 Mbit x8 or 4 Mbit x16, uniform block or boot block) 3 V supply flash memory Feature Supply voltage V = 2.7 to 3.6 V for program/erase/read CC V =12 V for fast program (optional) TSOP48 (NA) PP TSOP56 (NB) 12 x 20 mm 14 x 20 mm(1) Asynchronous random/page read FBGA Page width: 4 words FBGA BGA Page access: 25 ns Random access: 60 ns, 70 ns, 90 ns TBGA64 (ZF) FBGA64 (ZS) TFBGA48 (ZA) 11 x 13 mm 10 x 13 mm(1) 6x8mm Fast program commands 2-word/4-byte program (without V =12 V) 1. Packages only available upon request. PP 4-word/8-byte program (with V =12 V) PP RoHS compliant packages 16-word/32-byte write buffer 128-word extended memory block Programming time Low power consumption:standby and 10 s per byte/word typical automatic standby Chip program time: 10 s (4-word program) Unlock Bypass Program command Memory organization Faster production/batch programming M29W640GH/L: Common flash interface: 64-bit security code 128 main blocks, 64 Kbytes each M29W640GT/B V /WP pin for fast program and write protect PP Eight 8-Kbyte boot blocks (top or bottom) Temporary block unprotection mode 127 main blocks, 64 Kbytes each 100,000 program/erase cycles per block Program/erase controller Electronic signature Embedded byte/word program algorithms Manufacturer code: 0020h Program/erase suspend and resume Device code (see Table 1) Read from any block during program Automotive Certified Parts Available suspend Read and program another block during erase suspend Table 1. Device summary Root part number Device code M29W640GH: uniform, last block protected by V /WP 227Eh + 220Ch + 2201h PP M29W640GL: uniform, first block protected by V /WP 227Eh + 220Ch + 2200h PP M29W640GT: top boot blocks 227Eh + 2210h + 2201h M29W640GB: bottom boot blocks 227Eh + 2210h + 2200h October 2009 Rev 11 1/90 www.numonyx.com 1Contents M29W640GH, M29W640GL, M29W640GT, M29W640GB Contents 1 Description . 7 2 Signal descriptions . 14 2.1 Address Inputs (A0-A21) . 14 2.2 Data Inputs/Outputs (DQ0-DQ7) . 14 2.3 Data Inputs/Outputs (DQ8-DQ14) 14 2.4 Data Input/Output or Address Input (DQ15A1) . 14 2.5 Chip Enable (E) 14 2.6 Output Enable (G) 14 2.7 Write Enable (W) . 15 2.8 V /Write Protect (V WP) . 15 PP PP/ 2.9 Reset/Block Temporary Unprotect (RP) 17 2.10 Ready/Busy Output (RB) . 17 2.11 Byte/Word Organization Select (BYTE) 17 2.12 V supply voltage 18 CC 2.13 V ground 18 SS 3 Bus operations 19 3.1 Bus read 19 3.2 Bus write 19 3.3 Output disable . 19 3.4 Standby 19 3.5 Automatic standby 20 3.6 Special bus operations . 20 3.6.1 Electronic signature 20 3.6.2 Block protect and chip unprotect 20 4 Command interface . 23 4.1 Standard commands 23 4.1.1 Read/Reset command 23 4.1.2 Auto Select command 23 4.1.3 Read CFI Query command 24 2/90