32 Mbit (x16) Multi-Purpose Flash Plus SST39VF3201B / SST39VF3202B A Microchip Technology Company Data Sheet The SST39VF320xB devices are 2M x16 CMOS Multi-Purpose Flash Plus (MPF+) manufactured with SSTs proprietary, high-performance CMOS Super- Flash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39VF320xB write (Program or Erase) with a 2.7-3.6V power supply. These devices conform to JEDEC standard pin assignments for x16 memories. Features Organized as 2M x16 Security-ID Feature SST: 128 bits User: 128 words Single Voltage Read and Write Operations Fast Read Access Time: 2.7-3.6V 70ns Superior Reliability Latched Address and Data Endurance: 100,000 Cycles (Typical) Greater than 100 years Data Retention Fast Erase and Word-Program: Low Power Consumption (typical values at 5 MHz) Sector-Erase Time: 18 ms (typical) Active Current: 6 mA (typical) Block-Erase Time: 18 ms (typical) Standby Current: 4 A (typical) Chip-Erase Time: 35 ms (typical) Auto Low Power Mode: 4 A (typical) Word-Program Time: 7 s (typical) Hardware Block-Protection/WP Input Pin Automatic Write Timing Top Block-Protection (top 32 KWord) Internal V Generation PP for SST39VF3202B Bottom Block-Protection (bottom 32 KWord) End-of-Write Detection for SST39VF3201B Toggle Bits Data Polling Sector-Erase Capability Uniform 2 KWord sectors CMOS I/O Compatibility Block-Erase Capability JEDEC Standard Uniform 32 KWord blocks Flash EEPROM Pin Assignments Chip-Erase Capability Packages Available 48-lead TSOP (12mm x 20mm) Erase-Suspend/Erase-Resume Capabilities 48-ball TFBGA (6mm x 8mm) Hardware Reset Pin (RST ) Allnon-Pb(lead-free)devicesareRoHScompliant 2011 Silicon Storage Technology, Inc. www.microchip.com DS25111A 12/1132 Mbit Multi-Purpose Flash Plus SST39VF3201B / SST39VF3202B A Microchip Technology Company Data Sheet Product Description The SST39VF320xB devices are 2M x16 CMOS Multi-Purpose Flash Plus (MPF+) manufactured with SSTs proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alter- nate approaches. The SST39VF320xB write (Program or Erase) with a 2.7-3.6V power supply. These devices conform to JEDEC standard pin assignments for x16 memories. Featuring high performance Word-Program, the SST39VF320xB devices provide a typical Word- Program time of 7 sec. These devices use Toggle Bit or Data Polling to indicate the completion of Program operation. To protect against inadvertent write, they have on-chip hardware and Soft- ware Data Protection schemes. Designed, manufactured, and tested for a wide spectrum of appli- cations, these devices are offered with a guaranteed typical endurance of 100,000 cycles. Data retention is rated at greater than 100 years. The SST39VF320xB devices are suited for applications that require convenient and economical updating of program, configuration, or data memory. For all system applications, they significantly improve performance and reliability, while lowering power consumption. They inherently use less energy during Erase and Program than alternative flash technologies. The total energy consumed is a function of the applied voltage, current, and time of application. Since for any given voltage range, the SuperFlash technology uses less current to program and has a shorter erase time, the total energy consumed during any Erase or Program operation is less than alternative flash tech- nologies. These devices also improve flexibility while lowering the cost for program, data, and con- figuration storage applications. The SuperFlash technology provides fixed Erase and Program times, independent of the number of Erase/Program cycles that have occurred. Therefore the system software or hardware does not have to be modified or de-rated as is necessary with alternative flash technologies, whose Erase and Pro- gram times increase with accumulated Erase/Program cycles. To meet high-density, surface mount requirements, the SST39VF320xB devices are offered in 48-lead TSOP and 48-ball TFBGA packages. See Figure 2 and Figure 3 for pin assignments. 2011 Silicon Storage Technology, Inc. DS25111A 12/11 2