TC1015-2.85VCT713 Microchip

TC1014/TC1015/TC1185 50 mA, 100 mA and 150 mA CMOS LDOs with Shutdown and Reference Bypass Features: General Description Low Supply Current (50 A, typical) The TC1014/TC1015/TC1185 are high accuracy (typically 0.5%) CMOS upgrades for older (bipolar) Low Dropout Voltage Low Dropout Regulators (LDOs) such as the LP2980. Choice of 50 mA (TC1014), 100 mA (TC1015) Designed specifically for battery-operated systems, the and 150 mA (TC1185) Output devices CMOS construction eliminates wasted ground High Output Voltage Accuracy current, significantly extending battery life. Total supply Standard or Custom Output Voltages current is typically 50 A at full load (20 to 60 times Power-Saving Shutdown Mode lower than in bipolar regulators). Reference Bypass Input for Ultra Low-Noise The devices key features include ultra low-noise Operation operation (plus optional Bypass input), fast response to Overcurrent and Overtemperature Protection step changes in load, and very low dropout voltage, typically 85mV (TC1014), 180mV (TC1015), and Space-Saving 5-Pin SOT-23 Package 270mV (TC1185) at full-load. Supply current is Pin-Compatible Upgrades for Bipolar Regulators reduced to 0.5 A (max) and V falls to zero when OUT Standard Output Voltage Options: the shutdown input is low. The devices incorporate both - 1.8V, 2.5V, 2.6V, 2.7V, 2.8V, 2.85V, 3.0V, overtemperature and overcurrent protection. 3.3V, 3.6V, 4.0V, 5.0V The TC1014/TC1015/TC1185 are stable with an output Applications: capacitor of only 1 F and have a maximum output current of 50 mA, 100 mA and 150 mA, respectively. Battery-Operated Systems For higher output current regulators, please see the Portable Computers TC1107 (DS21356), TC1108 (DS21357), TC1173 = 300 mA) data sheets. Medical Instruments (DS21362) (I OUT Instrumentation Package Type Cellular/GSM/PHS Phones Linear Post-Regulator for SMPS 5-Pin SOT-23 Pagers V Bypass OUT Typical Application 4 5 1 5 V V V V IN IN OUT OUT TC1014 + TC1014 TC1015 1F TC1015 TC1185 TC1185 2 GND 132 V GND SHDN IN 3 4 SHDN Bypass 470 pF Reference Bypass Cap (Optional) Shutdown Control (from Power Control Logic) 2007 Microchip Technology Inc. DS21335E-page 1TC1014/TC1015/TC1185 Notice: Stresses above those listed underAbsolute 1.0 ELECTRICAL Maximum Rating may cause permanent damage to CHARACTERISTICS the device. These are stress ratings only and functional operation of the device at these or any other conditions Absolute Maximum Ratings above those indicated in the operation sections of the specifications is not implied. Exposure to Absolute Input Voltage .........................................................6.5V Maximum Rating conditions for extended periods may + 0.3V) Output Voltage........................... (-0.3V) to (V IN affect device reliability. Power Dissipation................Internally Limited (Note 7) Maximum Voltage on Any Pin ........V +0.3V to -0.3V IN < 125C Operating Temperature Range...... -40C < T J Storage Temperature..........................-65C to +150C TC1014/TC1015/TC1185 ELECTRICAL SPECIFICATIONS Electrical Specifications: V = V + 1V, I = 100 A, C = 1.0 F, SHDN > V , T = +25C, unless otherwise noted. IN R L L IH A Boldface type specifications apply for junction temperatures of -40C to +125C. Parameter Symbol Min Typ Max Units Device Test Conditions Input Operating Voltage 2.7 6.0 V Note 1 V IN Maximum Output Current 50 I mA TC1014 OUTMAX 100 TC1015 150 TC1185 Output Voltage V V 2.5% V 0.5% V + 2.5%V Note 2 OUT R R R V Temperature Coefficient TCV 20 ppm/C Note 3 OUT OUT 40 Line Regulation V / 0.05 0c.35 % (V + 1V) V 6V OUT R IN V IN Load Regulation V / 0.5 2 % TC1014 TC1015 I = 0.1 mA to I OUT L OUTMAX 0.5 3 TC1185 I = 0.1 mA to I V L OUTMAX OUT (Note 4) Dropout Voltage V -V 2 mV I = 100 A L IN OUT 65 I = 20 mA L 85 120 I = 50 mA L 180 250 TC1015 TC1185 I = 100 mA L I = 150 mA (Note 5) 270 400 TC1185 L Supply Current (Note 8) I 50 80 A SHDN = V , I = 0 IN IH L Shutdown Supply Current I 0.05 0.5 A SHDN = 0V INSD Power Supply Rejection PSRR 64 dB F 1kHz RE Ratio Output Short Circuit Current I 300 450 mA V = 0V OUTSC OUT Thermal Regulation V / 0.04 V/W Notes 6, 7 OUT P D Thermal Shutdown Die T 160 C SD Temperature Thermal Shutdown T 10 C SD Hysteresis Note 1: The minimum V has to meet two conditions: V 2.7V and V V + V . IN IN IN R DROPOUT 2: V is the regulator output voltage setting. For example: V = 1.8V, 2.5V, 2.6V, 2.7V, 2.8V, 2.85V, 3.0V, 3.3V, 3.6V, 4.0V, 5.0V. R R 6 3: TC V = (V V )x 10 OUT OUTMAX OUTMIN V x T OUT 4: Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range from 1.0 mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the thermal regulation specification. 5: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value at a 1V differential. 6: Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load or line regulation effects. Specifications are for a current pulse equal to I at V = 6V for T = 10 ms. LMAX IN 7: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the thermal resistance from junction-to-air (i.e., T , T , ). Exceeding the maximum allowable power dissipation causes the device to A J JA initiate thermal shutdown. Please see Section 5.0 Thermal Considerations for more details. 8: Apply for Junction Temperatures of -40C to +85C. DS21335E-page 2 2007 Microchip Technology Inc.