TC1016 80 mA, Tiny CMOS LDO With Shutdown Features General Description Space-Saving 5-Pin SC-70 and SOT-23 The TC1016 is a high-accuracy (typically 0.5%), Packages CMOS upgrade for bipolar low dropout regulators (LDOs). The TC1016 is offered in both the SC-70 and Extremely Low Operating Current for Longer SOT-23 packages. The SC-70 package represents a Battery Life: 53 A (typ.) 50% footprint reduction versus the popular SOT-23 Very Low Dropout Voltage package. Rated 80 mA Output Current Developed specifically for battery-powered systems, Requires only 1 F Ceramic Output Capacitance the devices CMOS construction consumes only 53 A High Output Voltage Accuracy: 0.5% (typ.) typical supply current over the entire 80 mA operating 10 sec (typ.) Wake-Up Time from SHDN load range. This can be as much as 60 times less than Power-Saving Shutdown Mode: 0.05 A(typ.) the quiescent operating current consumed by bipolar Overcurrent and Overtemperature Protection LDOs. Pin Compatible Upgrade for Bipolar Regulators With small-space requirements and cost in mind, the TC1016 was developed to be stable over the entire input voltage and output current operating range using Applications low value (1F ceramic), low Equivalent Series Cellular/GSM/PHS Phones Resistance (ESR) output capacitors. Additional Battery-operated Systems integrated features (such as shutdown, overcurrent Portable Computers and overtemperature protection) further reduce board space and cost of the entire voltage-regulating Medical Instruments application. Electronic Games Key performance parameters for the TC1016 are low Pagers drop out voltage (150mV (typ.) at 80mA output current), low supply current while shutdown (0.05 A typical) and fast stable response to sudden input voltage and load changes. Pin Configurations SOT-23 SC-70 V NC V V OUT IN OUT 5 4 54 TC1016 TC1016 132 1 23 V GND SHDN SHDN NC GND IN 2001-2012 Microchip Technology Inc. DS21666C-page 1TC1016 *Notice: Static-sensitive device. Unused devices must be 1.0 ELECTRICAL stored in conductive material. Protect devices from static dis- CHARACTERISTICS charge and static fields. Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to ABSOLUTE MAXIMUM RATINGS* the device. These are stress ratings only and functional oper- ation of the device at these or any other conditions above Input Voltage .........................................................6.5V those indicated in the operational sections of the Power Dissipation................ Internally Limited (Note 7) specifications is not implied. Exposure to Absolute Maximum Operating Temperature ................. -40C < T < 125C Rating Conditions for extended periods may affect device J reliability Storage Temperature......................... -65C to +150C Maximum Voltage On Any Pin........V + 0.3V to -0.3V IN ELECTRICAL CHARACTERISTICS V = V + 1V, I = 100 A, C = 1.0F, SHDN > V , T = 25C, unless otherwise noted. Boldface type specifications apply for IN R L L IH A junction temperatures of 40C to +125C. Parameter Sym Min Typ Max Units Test Conditions Input Operating Voltage V 2.7 6.0 V Note 1 IN Maximum Output Current I 80 mA OUTMAX Output Voltage V V 2.5% V 0.5% V + 2.5% V Note 2 OUT R R R V Temperature Coefficient TCV 40 ppm/C Note 3 OUT OUT Line Regulation V / V )/V 0.01 0.2 %/V (V + 1V) < V < 6V OUT IN R R IN Load Regulation (Note 4) V /V 0.23 1 %I = 0.1 mA to I OUT R L OUTMAX Dropout Voltage (Note 5)V V 2 mV I = 100 A IN OUT L 100 200 I = 50 mA L 150 300 I = 80 mA L Supply Current I 53 90 A SHDN = V , I = 0 IN IH L Shutdown Supply Current I 0.05 0.5 A SHDN = 0V INSD Power Supply Rejection Ratio PSRR 58 dB f =1 kHz, I = 50 mA L Wake-Up Time t 10 sV = 5V, I = 60 mA, WK IN L (from Shutdown mode) C = 1 F, C = 1 F, IN OUT f = 100 Hz Settling Time t 32 sV = 5V, I = 60 mA,C = S IN L IN (from Shutdown Mode) 1F, C = 1 F, f = OUT 100 Hz Output Short Circuit Current I 120 mA V = 0V OUTSC OUT Thermal Regulation V /P 0.04 V/W Notes 6, 7 OUT D Thermal Shutdown Die T 160 C SD Temperature Thermal Shutdown Hysteresis T 10 C SD Output Noise eN 800 nV/Hz f = 10 kHz SHDN Input High Threshold V 60 %V V = 2.7V to 6.0V IH IN IN SHDN Input Low Threshold V 15 %V V = 2.7V to 6.0V IL IN IN Note 1: The minimum V has to meet two conditions: V 2.7V and V (V + 2.5%)+V . IN IN IN R DROPOUT 2: V is the regulator voltage setting. For example: V = 1.8V, 2.7V, 2.8V, 3.0V. R R 6 V V 10 OUTMAX OUTMIN 3: TCV = -------------------------------------------------------------------------------------- OUT V T OUT 4: Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range from 0.1 mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the Thermal Regulation specification. 5: Dropout voltage is defined as the input-to-output differential at which the output voltage drops 2% below its nominal value at a 1V differential. 6: Thermal regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load or line regulation effects. Specifications are for a current pulse equal to Ilmax at V = 6V for t = 10 msec. IN 7: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable juction temperature and the thermal resistance from junction-to-air (i.e. T , T , ). Exceeding the maximum allowable power dissipation causes the device to initiate A J JA thermal shutdown. Please see Section 5.0 Thermal Considerations of this data sheet for more details. DS21666C-page 2 2001-2012 Microchip Technology Inc.