TC4626EOE Microchip

TC4626/TC4627 Power CMOS Drivers With Voltage Tripler Features: General Description: Power Driver With On-Board Voltage Booster The TC4626/TC4627 are single CMOS high-speed drivers with an on-board voltage boost circuit. These Low I : < 4 mA DD parts work with an input supply voltage from 4 to 6 volts. Small Package: 8-Pin PDIP The internal voltage booster will produce a V BOOST Undervoltage Circuitry potential up to 12 volts above V . This V is not IN BOOST Fast Rise/Fall Time: <40 ns 1000 pF regulated, so its voltage is dependent on the input V DD Below-Rail Input Protection voltage and output drive loading requirements. An internal undervoltage lockout circuit keeps the output in a low state when V drops below 7.8 volts. Output Applications: BOOST is enabled when V is above 11.3 volts. BOOST Raises 5V to drive higher Vgs (ON) MOSFETs Eliminates one system power supply Note: Check the Microchip web site for available package types and package information. Package Type PDIP/CERDIP SOIC - - V 1 8 C1 1 16 V C1 DD DD + IN 2 2 7 NC 15 NC C1 TC4626 + NC C1 3 C2 3 6 V 14 BOOST TC4627 NC GND OUT 4 IN 4 5 13 TC4626 TC4627 NC C2 5 12 V NC 6 11 BOOST NC 7 10 NC GND OUT 8 9 Functional Block Diagram 2 V BOOST (Unregulated 3 x V ) 6 C1+ DD + EXT C 1 1 EXT + C1- C 3 3 Voltage C2 + EXT Booster UV LOCK V = 2 x V DD C 2 Noninverting 5 Output 8 V Clock DD 7 I0 Inverting GND 4 NOTE: Pin numbers correspond to 8-pin package. 2001-2014 Microchip Technology Inc. DS20001426D-page 1 4 4 TC4626/TC4627 Notice: Stresses above those listed under Absolute Maxi- 1.0 ELECTRICAL mum Ratings may cause permanent damage to the device. CHARACTERISTICS These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operation sections of the specifications is not implied. Absolute Maximum Ratings Exposure to Absolute Maximum Rating conditions for Supply Voltage ......................................................6.2V extended periods may affect device reliability. Input Voltage, Any Terminal .....................................V + 0.3V to GND 0.3V S Package Power Dissipation (T 70C) A PDIP........................................................730 mW CERDIP...................................................800 mW SOIC .......................................................760 mW Derating Factor PDIP .......5.6 mW/C Above 36C CERDIP...............................................6.0 mW/C Operating Temperature Range (Ambient) C Version.........................................0C to +70C E Version......................................-40C to +85C M Version ...................................-55C to +125C Storage Temperature Range ..............-65C to +150C TC4626/TC4627 ELECTRICAL SPECIFICATIONS Electrical Characteristics: T = +25C, V = 5V, C = C = C 10F unless otherwise noted. A DD 1 2 3 Parameter Symbol Min. Typ. Max. Units Test Conditions Input Logic 1, High Input Voltage V 2.4 V IH Logic 0, Low Input Voltage 0.8 V V IL Input Current -1 +1 A 0V V V I IN DRIVE IN Output High Output Voltage V 0.025 V V BOOST OH Low Output Voltage V 0.025 V OL Output Resistance, High 10 15 I = 10 mA, V = 5V R OUT DD O Output Resistance, Low 8 10 I = 10 mA, V = 5V R OUT DD O Peak Output Current I 1.5 A PK Switching Time Rise Time t 33 40 ns Figure 3-1, Figure 3-2 R Fall Time 27 35 ns Figure 3-1, Figure 3-2 t F Delay Time 35 45 ns Figure 3-1, Figure 3-2 t D1 Delay Time t 45 55 ns Figure 3-1, Figure 3-2 D2 Maximum Switching Frequency 1.0 MHz V = 5V, V > 8.5V, F DD BOOST MAX Figure 3-1 Voltage Booster Voltage Tripler Output 300 400 I = 10mA, V = 5V R L DD 3 Source Resistance Voltage Doubler Output 120 200 R 2 Source Resistance Oscillator Frequency F 12 28 kHz OSC Oscillator Amplitude Measured 4.5 10 V R = 10 k V LOAD OSC at C1- Undervoltage Threshold 7.0 7.8 8.5 V UV V BOOST Start-Up Voltage V 10.5 11.3 12 V START V BOOST DS20001426D-page 2 2001-2014 Microchip Technology Inc.