USB50403C USB50424C Available Bidirectional TVS Array DESCRIPTION This USB50403C USB50424C Transient Voltage Suppressor (TVS) family is packaged in a SOT-143 configuration giving protection to 1 bidirectional data or interface line. It is designed for use in applications where protection is required at the board level from voltage transients caused by electrostatic discharge (ESD) as defined in IEC 610004-2, electrical fast transients (EFT) per IEC 61000-4-4 and secondary effects of lightning. It is also available in RoHS compliant versions. These TVS arrays have a peak power rating of 500 watts for an 8/20 sec pulse. This array is suitable for protection of sensitive circuitry consisting of TTL, CMOS, DRAMs, SRAMs, HCMOS, HSIC microprocessors, and Universal Serial Bus (USB) and I/O transceivers. SOT-143 Package Also available in: Important: For the latest information, visit our website USB50403C USB50424C MECHANICAL and PACKAGING CASE: Molded SOT-143 surface mount TERMINALS: Tin-lead or RoHS compliant annealed matte-tin plating MARKING: See electrical characteristics table POLARITY: Pin 1 (Please refer to Schematic and Pad Layout for pin 1.) TAPE & REEL option: Per EIA standard 481-1-A. Consult factory for quantities WEIGHT: Approximately 0.035 grams See Package Dimensions on last page. PART NOMENCLATURE USB 5 04 03 C (e3) Rated for USB RoHS Compliance applications e3 = RoHS Compliant Blank = non-RoHS Compliant 500W P Rating PP Bidirectinal Designator 4 Pin Package Rated Standoff Voltage (V ) WM SYMBOLS & DEFINITIONS Symbol Definition Temperature Coefficient of Breakdown Voltage: The change in breakdown voltage divided by the change in V(BR) temperature that caused it expressed in %/C or mV/C. C Total Capacitance: The total small signal capacitance between the diode terminals of a complete device. T I Standby Current: The current through the device at rated stand-off voltage. D V Breakdown Voltage: The voltage across the device at a specified current I in the breakdown region. (BR) (BR) Clamping Voltage: The voltage across the device in a region of low differential resistance during the application of an V C impulse current (I ) for a specified waveform. PP Working Standoff Voltage: The maximum-rated value of dc or repetitive peak positive cathode-to-anode voltage that V WM may be continuously applied over the standard operating temperature. ELECTRICAL CHARACTERISTICS STAND- BREAKDOWN CLAMPING CLAMPING STANDBY TOTAL TEMPERATURE OFF VOLTAGE VOLTAGE VOLTAGE CURRENT CAPACITANCE COEFFICIENT VOLTAGE V V V I (f= 1 MHz) OF V (BR) C C D (BR) PART DEVICE V 1 mA 1 Amp 5 Amp V C WM WM T V(BR) NUMBER MARKING* (Figure 2) (Figure 2) 0 V Volts Volts Volts Volts A pF mV/C MAX MIN MAX MAX MAX MAX MAX USB50403C 503 3.3 4 8 11 200 3 -5 USB50405C 505 5.0 6.0 10.8 13 40 3 1 USB50412C 512 12.0 13.3 19 26 1 3 8 USB50415C 515 15.0 16.7 24 32 1 3 11 USB50424C 524 24.0 26.7 43 57 1 3 28 * Device marking has a dot suffix for the e RoHS compliant option (e.g. 503, 512, etc.) RF01091-2, Rev. D (7/21/16) 2015 Microsemi Corporation Page 2 of 4 One Enterprise, Aliso Viejo, CA 92656 Ph: 949-380-6100 sales.support microsemi.com