1N914B-TP Micro Commercial Components (MCC)

NOT RECOMMENDED FOR NEW DESIGNS MCC TM omponents 20736 Marilla Street Chatsworth Micro Commercial Components 1N914(A)(B) Moisture Sensitivity Level 1 500mW 100 Volt Low Current Leakage Compression Bond Construction Silicon Epitaxial Low Cost Marking : Cathode band and type number Diodes Suffix designates Lead Free Finish/Rohs Compliant (Note1) Compliant. See ordering information) DO-35 O O Operating Temperature: -55 C to +150 C O O Storage Temperature: -55 C to +150 C O Maximum Thermal Resistance 300 C/W Junction To Ambient O Electrical Characteristics 25 C Unless Otherwise Specified Maximum Repetitive D V 100V RRM Reverse Voltage Average Rectified I 200mA O Forward Current Power Dissipation P 500mW D O A Junction Temperature T 150C J Cathode Mark Peak Forward Surge 1.0A Pulse Width=1.0 Current second B I FSM 4.0A Pulse Width=1.0 microsecond D Minimum Breakdown 100V I =100A, R V R Voltage 75V I =5.0A R Maximum C Instantaneous O Forward Voltage T = 25 C J 1N914 V 1.0V I = 10mA F FM 1N914 A I = 20mA FM 1N914 B I = 100mA FM DIMENSIONS 1N914 B 720mV I = 5.0mA FM O Maximum Reverse 25nA V =20V, T =25 C, R J INCHES MM O DIM MIN MAX MIN MAX NOTE Current 5.0A V =75V, T =25 C, R J I A --- .166 --- 4.2 R O 50A V =20V, T =150 C R J B --- .079 --- 2.00 C --- .020 --- .52 Typical Junction Measured at 1.0MHz, C 4.0pF D 1.000 --- 25.40 --- J Capacitance V =0V R Reverse Recovery I =10mA F Time T 4.0nS V = 6V rr R R =100 , I =1.0mA L rr *Pulse test: Pulse width 300 usec, Duty cycle 2% Note: 1. Lead in Glass Exemption Applied, see EU Directive Annex 7(C)-I. www.mccsemi.com Revision: B 2012/01/01 1 of 4MCC 1N914(A)(B) TM Micro Commercial Components Figure 1 Typical Forward Characteristics 20 1N914B 1N914A Figure 2 10 Forward De rating Curve 600 6 1N914 4 500 2 400 1 MilliAmps .6 300 MilliWatts .4 200 .2 O 25 C 100 .1 Single Phase, Half Wave 60Hz Resistive or Inductive Load .06 0 .04 0 50 75 100 125 150 175 O C .02 Admissable Power Dissipation - MilliWatts versus O .01 Ambient Temperature - C .4 .6 .8 1.0 1.2 1.4 Volts Instantaneous Forward Current - Amperes versus Instantaneous Forward Voltage - Volts Figure 3 Junction Capacitance 10 6 4 2 O T =25 C pF J 1 .6 .4 .2 .1 .1 .2 .4 1 2 10 20 200 400 1000 4 40 100 Volts Junction Capacitance - pF versus Reverse Voltage - Volts www.mccsemi.com Revision: B 2012/01/01 2 of 4