BAS19HE3-TP Micro Commercial Components (MCC)

BAS19HE3 THRU BAS21HE3 Features Halogen Free.Gree Device (Note 1) AEC-Q101 Qualified 350mW High Conductance Fast Switching Speed Small Signal Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 Diodes Lead Free Finish/RoHS Compliant Suffix Designates RoHS Compliant. See Ordering Information) Maximum Ratings Operating Junction Temperature Range: -65C to +150C SOT-23 Storage Temperature Range: -65C to +150C Thermal Resistance : 357C/W Junction to Ambient(Note 2) A D Repetitive Continuous Peak Reverse MCC Device Reverse Voltage B C Voltage Part Number Marking V R V RRM F E BAS19HE3 JP 120V 120V 200V BAS20HE3 JR 200V BAS21HE3 JS 250V 250V G H J L K o Maximum Ratings 25 C Unless Otherwise Specified DIMENSIONS INCHES MM Average Rectified DIM NOTE I 225mA (Note 2) MIN MAX MIN MAX F(AV) Forward Current A 0.110 0.120 2.80 3.04 B 0.083 0.104 2.10 2.64 Forward DC Current I 400mA T =25 (Note 2) FM A C 0.047 0.055 1.20 1.40 D 0.034 0.041 0.85 1.05 Non-Repetitive Peak E 0.067 0.083 1.70 2.10 9.0A t=1us Forward Surge I F 0.018 0.024 0.45 0.60 FSM 0.5A t=1s Current G 0.01 0.15 0.0004 0.006 H 0.035 0.043 0.90 1.10 Repetitive Peak I J 0.003 0.007 0.08 0.18 625mA FRM Forward Curren K 0.014 0.020 0.35 0.51 L 0.007 0.020 0.20 0.50 Power Dissipation P 350mW TOT T =25 A Suggested Solder Pad Layout Note: 1. Halogen freeGreen products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 0.031 0.800 2. Mounted on FR-4 board with recommended pad layout . 0.035 0.900 0.079 inches 2.000 mm Internal Structure 3 0.037 0.950 0.037 0.950 2 1 Rev.3-5-10252021 1/4 MCCSEMI.COMBAS19HE3 THRU BAS21HE3 Electrical Characteristics 25C Unless Otherwise Specified Parameter Conditions Symbol Min. Typ. Max. Units I =100mA 1 V F Forward Voltage V F I =200mA 1.25 V F V =V 100 nA R Rmax Reverse Current I R V =V , T =150C 100 A R Rmax J Dynamic Forward Resistance r I =100mA 5 f F V = 0V, f = 1MHz Junction Capacitance C 5 pF R J I =I =30mA, F R Reverse Recovery Time t 50 ns rr I =0.1I ,R =100 rr R L Rev.3-5-10252021 2/4 MCCSEMI.COM